Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T23:46:53.436Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Published online by Cambridge University Press:  01 February 2011

Min Yu ,
Xiao Zhang ,
Ru Huang ,
Xing Zhang ,
Yangyuan Wang ,
Jinyu Zhang  and
Hideki Oka
Min Yu
Affiliation:
Institute of Microelectronics, Peking University, China 100871
Xiao Zhang
Affiliation:
Institute of Microelectronics, Peking University, China 100871
Ru Huang
Affiliation:
Institute of Microelectronics, Peking University, China 100871
Xing Zhang
Affiliation:
Institute of Microelectronics, Peking University, China 100871
Yangyuan Wang
Affiliation:
Institute of Microelectronics, Peking University, China 100871
Jinyu Zhang
Affiliation:
Fujitsu R&D Center Co. LTD, Room B1003, Eagle Run Plaza No.26 Xiaoyun Road Chaoyang District Beijing, China
Hideki Oka
Affiliation:
Fujitsu Laboratories LTD, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
Get access

Abstract

Behavior of point defects in annealing is investigated a lot in order to suppress the Transient Enhanced Diffusion (TED) of boron as is urged by the development of integrated circuits. Surface annihilation possibility for point defects is very important in determining junction depth in the case of ultra-shallow doping. However the understanding on it is still ambiguous considering the inconsistent results on surface annihilation behavior. In this paper the variation of surface annihilation possibility is studied. The simulation on boron diffusion as well as silicon diffusion is performed. The evolution of Si clusters is simulated. By explaining experimental results with Kinetic Monte Carlo method based simulation, we proposed that surface annihilation possibility varies in different cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.9
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Venezia, V.C., Kalyanaraman, R., Gossmann, H.–J. L., Rafferty, C. S. and Werner, P., Appl Phys Lett. 2001; 79(10):1429–1431.Google Scholar
[2] Yu, Min, Huang, Ru, Zhang, Xing, Wang, Yangyuan and Oka, Hideki. IEICE Trans Electon. 2003; E86-C (3):295–300.Google Scholar
[3] Yu, Min, Huang, Ru, Zhang, Xing, Wang, Yangyuan, Suzuki, Kunihiro, Oka, Hideki, Materials Science in Semiconductor Processing 7 (2004) 13–17 Google Scholar
[4] Agarwal, Adiya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M. and Erokhin, Yu E., Appl Phys Lett. 1997;70(25):3332–3334.Google Scholar
[5] Seebauer, E.G., International Conference on Solid-State and Integrated Circuits Technology, 2004, P.1032 Google Scholar