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The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium Nitride

Published online by Cambridge University Press:  26 February 2011

R. J. Molnar ,
K. B. Nichols ,
P. Maki ,
E. R. Brown  and
I. Melngailis
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
K. B. Nichols
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
P. Maki
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
E. R. Brown
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
I. Melngailis
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
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Abstract

Gallium nitride (GaN) films grown by hydride vapor phase epitaxy on a variety of substrates have been investigated to study what role silicon and oxygen impurities play in determining the residual donor levels found in these films. Secondary ion mass spectroscopy analysis has been performed on these films and impurity levels have been normalized to ion implanted calibration standards. While oxygen appears to be a predominate impurity in all of the films, in many of them the sum of silicon and oxygen levels is insufficient to account for the donor concentration determined by Hall measurements. This suggests that either another impurity or a native defect is at least partly responsible for the autodoping of GaN. Additionally, the variation of impurity and carrier concentration with surface orientation and/or nucleation density suggests either a crystallographic or defect-related incorporation mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 479
Copyright
Copyright © Materials Research Society 1995

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