Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T10:49:22.138Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  10 August 2011

Chong Luo ,
Juan Li ,
He Li ,
Zhiguo Meng ,
Qian Huang ,
Shengzhi Xu ,
Hoi Sing Kwok  and
Shaozhen Xiong
Chong Luo
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Juan Li
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
He Li
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Zhiguo Meng
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Qian Huang
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Shengzhi Xu
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Hoi Sing Kwok
Affiliation:
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Shaozhen Xiong*
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
*
♣Corresponding author e-mail: [email protected]
Get access

Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

Keywords

polycrystalannealingphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-07
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kroll, U., Bucher, C., Benagli, S., Schönbächler, I., Meier, J., Shah, A., Ballutaud, J., Howling, A., Hollenstein, C., Büchel, A., Poppeller, M., Thin Solid Films 451, 525 (2004)10.1016/j.tsf.2003.11.036Google Scholar
2. Nasuno, Y., Kondo, M., Matsuda, A., Sol. Energy Mater. Sol. Cells 74, 497 (2000)10.1016/S0927-0248(02)00065-XGoogle Scholar
3. Demichelis, F., Pirri, C.F., Tresso, E., J. Appl. Phys 72(4), 1327 (1992)10.1063/1.351742Google Scholar
4. Roschek, T., nanocrystalline silicon solar cells prepared by 13.56MHz, Ph.D. Thesis, IPV, Berichte des Forschungszentrums Jülich, 2003, pp.41–43.Google Scholar
5. Filonovich, S. A., Águas, H., Bernacka-Wojcik, I., Gaspar, C., Vilarigues, M., Silva, L.B., Forunato, E., Martins, R., Vacuum 83, 1253 (2009)10.1016/j.vacuum.2009.03.017Google Scholar
6. Matsui, T., Kondo, M., Matsuda, A., J. Non-crystal. Solid 338-340, 646 (2004)10.1016/j.jnoncrysol.2004.03.073Google Scholar
7. Zhao, Y., Zhang, X. D., Zhu, F., Gao, Y.T., Wei, C.C., Xue, J.M., Ren, H.Z., Zhang, D.K., Hou, G.F., Sun, J., Geng, X. H., in: 15th International Photovoltaic Science & Engineering Conference (PVSEC-15), Shanghai, PR China, 2005, pp. 65.Google Scholar
8. Adhikary, K., Ray, S., J. Non-Crystal. Solids 353, 2289 (2007)10.1016/j.jnoncrysol.2007.01.019Google Scholar
9. Das, Debajyoti, Jana, Madhusudan, Mater. Lett. 58, 980 (2004)10.1016/j.matlet.2003.07.045Google Scholar
10. Fujibayashi, T., Kondo, M., J. Appl. Phys 99, 043703 (2006)10.1063/1.2173042Google Scholar
11. Matsui, T., Matsuda, A., Kondo, M., Sol. Energy Mater. Sol. Cells 90, 3199 (2006)10.1016/j.solmat.2006.06.019Google Scholar
12. Zhang, X.D., Sun, F.H., Wang, G.H., Xu, S.Z., Wei, C.C., Hou, G.F., Sun, J., Xiong, S.Z., Geng, X.H., and Zhao, Y., Phys. Status Solidi C 7(3-4), 1073(2010)Google Scholar
13. Wang, G.H., Zhang, X.D., Xu, S.Z., Wei, C.C., Sun, J., Xiong, S.Z., Geng, X.H., Zhao, Y., Phys. Status Solidi C 7(3-4), 1116(2010)Google Scholar