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Reversible and Irreversible Light-Induced Change of Photoluminescence in Porous Silicon

Published online by Cambridge University Press:  26 February 2011

Suk-Ho Choi  and
Byoung-Hun Mun
Suk-Ho Choi
Affiliation:
Department of Physics, College of Natural Sciences, Kyung Hee University, Suwon 449–701, Korea
Byoung-Hun Mun
Affiliation:
Department of Physics, College of Natural Sciences, Kyung Hee University, Suwon 449–701, Korea
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Abstract

We have investigated the light-induced change of photoluminescence(PL) and its recovery in porous silicon. The exposure of the porous silicon to continuous laser light in vacuum results in the quenching of the PL intensity, which is almost fully recovered by simply keeping the samples in vacuum or in air at room temperature for a few days. When the light exposure is done in air, the PL spectra of the samples with initial PL peak at 800 nm are blue-shifted to the peak position at 740 nm and the samples with the initial PL spectrum peaked at 740 nm shows only a rise of PL intensity without any change of its peak position. Fourier transform infrared(FTIR) studies suggest that the light-induced change of PL in air is a irreversible process and occurs as a result of optically induced replacement of some of the Si-H bonds with O-Si-H bonds or adsorption of oxygen with hydrogen loss.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 905
Copyright
Copyright © Materials Research Society 1995

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