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Residual Stress of Focused Ion Beam-Exposed Polycrystalline Silicon

Published online by Cambridge University Press:  26 February 2011

Kim M. Archuleta ,
David P. Adams ,
Michael J. Vasile  and
Julia E. Fulghum
Kim M. Archuleta
Affiliation:
[email protected], Sandia National Laboratories, Thin Film, Vacuum and Packaging, P.O. Box 5800, Albuquerque, NM, 87185, United States, 505-844-8317, 505-844-1110
David P. Adams
Affiliation:
[email protected], Sandia National Laboratories, Albuquerque, NM, 87185, United States
Michael J. Vasile
Affiliation:
[email protected], Sandia National Laboratories, Albuquerque, NM, 87185, United States
Julia E. Fulghum
Affiliation:
[email protected], University of New Mexico, Albuquerque, NM, 87106, United States
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Abstract

Medium energy (30 keV) focused gallium ion beam exposure of silicon results in a compressive in-plane stress with a magnitude as large as 0.4 GPa. Experiments involve uniform irradiation of thin polysilicon microcantilevers (200 micron length) over a range of dose from 1 x 1016 to 2 x 1018 ions/cm2. The radii of curvature of microcantilevers are measured using white light interferometry before and after each exposure. The residual stress is determined from these radii and other measured properties using Stoney's equation. The large residual stress is attributed to ion beam damage, microstructural changes and implantation.

Keywords

sputteringion-beam processingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 983: Symposium LL – Focused Ion Beams for Analysis and Processing , 2006 , 0983-LL08-10
Copyright
Copyright © Materials Research Society 2007

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