Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-24T09:37:20.167Z Has data issue: false hasContentIssue false
  • English
  • Français

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

Published online by Cambridge University Press:  01 February 2011

Hisashi Shima ,
Fumiyoshi Takano ,
Hiro Akinaga ,
Isao H Inoue  and
Hidenori Takagi
Hisashi Shima
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan, +81-29-861-5912, +81-29-861-3211
Fumiyoshi Takano
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Hiro Akinaga
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Isao H Inoue
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba, 305-8562, Japan
Hidenori Takagi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba, 305-8562, Japan
Get access

Abstract

The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

Keywords

oxidesputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-08
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Seo, S., Lee, M. J., Seo, D. H., Jeong, E. J., Suh, D.-S., Jong, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., and Park, B. H., Appl. Phys. Lett. 85, 5655 (2004).Google Scholar
2. Chen, A., Haddad, S., Wu, Y. C., Fang, T.-N., Lan, Z., Avanzino, S., Pangrel, S., Buynoshki, M., Rathor, M., Cai, W., Tripsas, N., bill, C., Vanbuskirk, M., and Taguchi, M., IEDM Tech. Dig., 746 (2005).Google Scholar
3. Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichnberg, B., Tiedke, S., J. Appl. Phys. 98, 033715 (2005).Google Scholar
4. Shima, H., Takano, F., Tamai, Y., Alinaga, H., and Inoue, I. H., Jpn. J. Appl. Phys. 46, L57 (2007).Google Scholar
5. Liu, S. Q., Wu, N. J., and Ignatiev, A., Appl. Phys. Lett. 76, 2749 (2000).Google Scholar
6. Contreras, J. Rodrigues, Kohlstedt, H., Poppe, U., Waser, R., Buchal, C., and Pertsev, N. A., Appl. Phys. Lett. 83, 4595 (2003).Google Scholar
7. Mark, P. and Helfrich, W., J. Appl. Phys. 33, 205 (1962).Google Scholar
8. Shang, D. S., Wang, Q., Chen, L. D., Dong, R., Li, X. M., and Zhang, W. Q., Phys. Rev. B 73, 245427 (2006).Google Scholar
9. Fowler, H. A., Devaney, J. E., and Hagedorn, J. G., IEEE Trans. on Dielectrics and Electrical Insulation, 10, 73 (2003).Google Scholar
10. Yasuda, S., Inoue, I. H., Akinaga, H., and Takagi, H., submitted to Phys. Rev. B.Google Scholar
11. Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., and Tanaka, H., Appl. Phys. Lett. 89, 103509 (2006).Google Scholar
12. Schmidt, T., Martel, R., Sandstrom, R. L., and Avouris, P., Appl. Phys. Lett. 73, 2173 (1998).Google Scholar