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Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

Published online by Cambridge University Press:  21 February 2011

W. Lur ,
J. Y. Cheng  and
L. J. Chen
W. Lur
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J. Y. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Complete removal of end-of-range (EOR) defects in ion implanted silicon has been achieved by the formation and growth of near noble silicides (CoSi 2 and NiSi 2 ) and refractory silicides (MoSi 2 and WSi2). Continued generation of vacancies during the silicide growth was found to be essential to reduce EOR defects. The results are consistent with the suggestion of the presence of a vacancy diffusion barrier near the EOR defects

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 33
Copyright
Copyright © Materials Research Society 1989

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