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Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1-(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

D. Wolfe ,
K. Flock ,
R. Therrien ,
R. Johnson ,
B. Rayner ,
L. Günther ,
N. Brown ,
B. Claflin  and
G. Lucovsky
D. Wolfe
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
K. Flock
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
R. Therrien
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
R. Johnson
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
B. Rayner
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
L. Günther
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
N. Brown
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
B. Claflin
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
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Abstract

A remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 343
Copyright
Copyright © Materials Research Society 1999

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References

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