Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-12T05:16:53.644Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

Published online by Cambridge University Press:  15 February 2011

N.V. Edwards ,
A.D. Batchelor ,
I.A. Buyanova ,
L.D. Madsen ,
M.D. Bremser ,
R.F. Davis ,
D.E. Aspnes  and
B. Monemar
N.V. Edwards
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183 [email protected]
A.D. Batchelor
Affiliation:
Analytical Instrumentation Facility, Box 7531, N.C. State University, Raleigh, NC, USA, 27695
I.A. Buyanova
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
L.D. Madsen
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
M.D. Bremser
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695 Now at Aixtron Inc., 1569 Barclay Blvd., Buffalo Grove, IL, USA, 60089
R.F. Davis
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695
D.E. Aspnes
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695
B. Monemar
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
Get access

Abstract

We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (∼2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introducing a strain-mediating layer (SML) above the standard high-temperature AlN buffer layer. The strain characteristics of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML layer. This is achieved by in-situ techiniques during crystal growth without degrading the optical and structural properties of the deposited layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.78
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Amano, H., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 27, Part1 L1384 (1988).Google Scholar
2 Detchprohm, T., Hiramatsu, K., Itoh, K., and Akasaki, I., Jpn. J. Appl. Phys. 31, Part 10B L1454 (1992).Google Scholar
3 Landolt-Börnstein, Vol. 17, edited by Madelung, O. (Springer, New York, 1982).Google Scholar
4 Properties of Group III Nitrides, edited by Edgar, J.H. (INSPEC, IEEE, London, 1994).Google Scholar
5 Buyanova, I.A., Bergman, J.P., Monemar, B., Amano, H., Akasaki, I., Appl. Phys. Lett. 68, 1255 (1996).Google Scholar
6 Shan, W., Hauenstein, R.J., Fischer, A.J., Song, J.J., Perry, W.G., Bremser, M.D., Davis, R.F. and Goldenberg, B., Phys. Rev. B 54, 13 460 (1996).Google Scholar
7 Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Benchorin, M., Diener, J., Meyer, B.K., Majewski, J., Eckey, L., Hoffman, A., Amano, H., Akasaki, I., Hiramatsu, K., and Detchprohm, T., Phys. Rev. B 53, 16 543 (1996).Google Scholar
8 Hiramatsu, K., Detchprohm, T., and Akasaki, I., Jpn. J. Appl. Phys. 32, 1528 (1993).Google Scholar
9 Dingle, R., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev. B 4, 1211 (1971).Google Scholar
10 Shan, W., Schmidt, T.J., Yang, X.H., Hwang, S.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995).Google Scholar
11 Skromme, B.J., Zhao, H., Goldenberg, B., Kong, H.S., Leonard, M.T., Bulman, G.E., Abernathy, C.R., Pearton, S.J., Proc. Mat. Res. Soc. 449, Boston, Ma., 1996.Google Scholar
12 Edwards, N.V., Yoo, S.D., Bremser, M.D., Weeks, T.W. Jr, Nam, O.H., Liu, H., Stall, R.A., Horton, M.N., Perkins, N.R., Kuech, T.F., Davis, R.F., and Aspnes, D.E., Appl. Phys. Lett. 70, 2001 (1996).Google Scholar
13 Edwards, N.V., Bremser, M.D., Davis, R.F., Yoo, S.D., Karan, C., and Aspnes, D.E., Appl. Phys. Lett., accepted for publication September 14, 1998.Google Scholar
14 Weeks, T.W. Jr, Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
15 Edwards, N.V., Yoo, S.D., Bremser, M.D., Zheleva, Ts., Horton, M.N., Perkins, N.R., Weeks, T.W. Jr, Liu, H., Stall, R.A., Perkins, N.R., Kuech, T.F., and Aspnes, D.E., Mat. Sci. And Eng. B 50, 134 (1997).Google Scholar
16 Domen, K., Horino, K., Kuramata, A., and Tanahasi, T., Appl. Phys. Lett. 70, 987 (1997).Google Scholar
17 Wu, X.H., Elsass, C.R., Abare, A., Mack, M., Keller, S., Petroff, P.M., DenBaars, S.P., and Speck, J.S., Appl. Phys. Lett. 72, 692 (1998).Google Scholar
18 Edwards, NV., Bremser, M.D., Davis, R.F., Batchelor, A.D., and Aspnes, D.E., unpublished.Google Scholar