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Reducing Time Dependent Line to Line Leakage Following Post CMP Clean

Published online by Cambridge University Press:  01 February 2011

Donald F Canaperi ,
Satyavolu Papa Rao ,
Trace Q. Hurd ,
Steven B Medd ,
T. M. Levin ,
Christopher J Penny ,
James H.-C. Chen  and
Matthew D Smalley
Donald F Canaperi
Affiliation:
[email protected], IBM, Albany, New York, United States
Satyavolu Papa Rao
Affiliation:
[email protected], IBM, Yorktown Heights, New York, United States
Trace Q. Hurd
Affiliation:
[email protected]
Steven B Medd
Affiliation:
[email protected], ATMI Inc, Danbury, Connecticut, United States
T. M. Levin
Affiliation:
[email protected], IBM, Albany, New York, United States
Christopher J Penny
Affiliation:
[email protected], United States
James H.-C. Chen
Affiliation:
[email protected], United States
Matthew D Smalley
Affiliation:
[email protected], United States
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Abstract

A systematic approach was taken to identify methods to prevent post CMP corrosion of copper in 22nm interconnect structures. Line to line current leakage measurements (at various times post CMP) were used as a means to quantify the extent and time-dependence of copper corrosion. Interruption of the corrosion mechanism by the use of passivating agents in post-CMP clean chemistries is explored. A broad-based screening was conducted to identify aqueous formulations of passivating agents for protection of copper which do not have deleterious effects on line resistance and overall defectivity. A formulation was identified which was effective in preventing corrosion when applied during post CMP brush clean.

Keywords

CMPmicroelectronicscorrosion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-E01-09
Copyright
Copyright © Materials Research Society 2010

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References

[1] Chen, H.C. et al, The Investigation of Galvanic Corrosion in Post-Copper-CMP Cleaning, International Interconnect Technology Conference, June 5-7, 2000, Burlingame, CA, pp 256–8.Google Scholar
[2] Miller, A.E. et al, Chemically induced defects during copper polish, International Interconnect Technology Conference, June 4-6, 2001, Burlingame, CA, pp 143–5.Google Scholar
[3] Shima, S. et al, Effects of Liner Metal and CMP Slurry Oxidizer on Copper Galvanic Corrosion, Volume 11, Issue 6, pp 285–295, 212th ECS Meeting, October 7–October 12, 2007 , Washington, DC. Google Scholar
[4] Hurd, T. et al, MRS Spring 2010 Symposium (E), invited talk.Google Scholar