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Reducing Dislocation Density by Sequential Implantation of Ge and C in Si

Published online by Cambridge University Press:  25 February 2011

Seongil Im ,
Jack Washburn ,
Ronald Gronsky ,
Nathan W. Cheung ,
Kin Man Yu  and
Joel W. Ager
Seongil Im
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Jack Washburn
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Ronald Gronsky
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
Kin Man Yu
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
Joel W. Ager
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
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Abstract

Carbon implantation was performed after high dose(5 x 1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial(SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Geinduced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 139
Copyright
Copyright © Materials Research Society 1993

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