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Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Published online by Cambridge University Press:  01 February 2011

Iftekhar Chowdhury ,
MVS Chandrasekhar ,
Paul B Klein ,
Joshua D Caldwell  and
Tangali Sudarshan
Iftekhar Chowdhury
Affiliation:
[email protected], University of South Carolina, Electrical Engineering, Columbia, South Carolina, United States
MVS Chandrasekhar
Affiliation:
[email protected], University of South Carolina, Electrical Engineering, Columbia, South Carolina, United States
Paul B Klein
Affiliation:
[email protected], Naval Research Laboratory, Washington, District of Columbia, United States
Joshua D Caldwell
Affiliation:
[email protected]@gmail.com, Naval Research Laboratory, Washington, District of Columbia, United States
Tangali Sudarshan
Affiliation:
[email protected], University of South Carolina, Electrical Engineering, Columbia, South Carolina, United States
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Abstract

Thick and high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 8 0 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2, which is the predominant growth species in chlorinated chemistries. The RMS roughness of the films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 μm/hr, 5-15 times higher than most conventional growths. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations as low as 2x10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (μPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 μs. These films also appeared to be free of polytype inclusions.

Keywords

chemical vapor deposition (CVD) (deposition)epitaxyelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B04-06
Copyright
Copyright © Materials Research Society 2010

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