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Real-time Optical Monitoring of GaxIn1−xP/GaP Heterostructures on Silicon

Published online by Cambridge University Press:  15 February 2011

N. Dietz ,
U. Rossow ,
D. E. Aspnes ,
N. Sukidi  and
K. J. Bachmann
N. Dietz
Affiliation:
Departments of Physics Materials Science
U. Rossow
Affiliation:
Departments of Physics
D. E. Aspnes
Affiliation:
Departments of Physics
N. Sukidi
Affiliation:
Materials Science
K. J. Bachmann
Affiliation:
Materials Science Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7919
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Abstract

In this paper we report the combined application of p-polarized reflectance spectroscopy (PRS), reflectance difference spectroscopy (RDS), and laser light scattering (LLS) to investigate the heteroepitaxy of GaxIn 1−xP/GaP on Si by pulsed chemical beam epitaxy (PCBE) with tertiarybutylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) precursors. Both, PRS and RDS follow the growth process with submonolayer resolution utilizing a periodic fine structure signal, which is caused by a periodic alteration of thickness and composition of an ultra-thin surface reaction layer during the periodic TEG and TBP exposure of the surface. After the transition from GaP growth to GaxIn 1−xP growth, the RDS oscillations are reoriented after about five precursor cycles in a new oscillation periodicity, where the response to the TBP pulse has the opposite direction. The ratio of the changes in the amplitudes of RDS signals as a response to TEG and TMI surface exposure is used to estimate the composition fo GaxIn 1−xP. The PRS fine structure is maintained after switching to GaxIn 1−xP growth with a separate feature for each TEG and TMI surface exposure. The amplitude ratio of these features changes during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 127
Copyright
Copyright © Materials Research Society 1996

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References

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