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Real Time Ellipsometric Study of Boron Nitride Thin Film Growth

Published online by Cambridge University Press:  10 February 2011

E. Bertran ,
A. Canillas ,
J. Campmany ,
M. El Kasmi ,
E. Pascual ,
J. Costa  and
J. L. Andújar
E. Bertran
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
A. Canillas
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
J. Campmany
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
M. El Kasmi
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
E. Pascual
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
J. Costa
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
J. L. Andújar
Affiliation:
LFCF, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain.
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Abstract

We present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PECVD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on Ni-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trayectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. We applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sofisticated model considering a variable refractive index could better describe these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 307
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Edgard, J.H. (ed.), Properties of Group III Nitrides, INSPEC, London, 1994.Google Scholar
2. Pouch, J.J. and Alterovitz, S.A. (eds.), Synthesis and Properties of Boron Nitride, Transtech Publications, Zürich, 1990.Google Scholar
3. Yoshida, T., Proc. Diamond Films 95 Conference, Barcelona, Spain, 1995. To be published in Diamond Relat.Mater.Google Scholar
4. Canillas, A., Bertran, E., Andújar, J.L. and Drévillon, B., J.Appl.Phys. 68, 2752 (1990).Google Scholar
5. Kidelmo, M. and Drévillon, B., Appl.Phys.Lett. 67, 918 (1995).Google Scholar
6. Andújar, J.L., Bertran, E., Canillas, A., Andreu, J., Esteve, J. and Morenza, J.L., Vacuum 39, 795 (1989).Google Scholar
7. Canillas, A., Bertran, E., Andújar, J.L. and Morenza, J.L., Vaccum 39, 785 (1989).Google Scholar
8. Campmany, J., Bertran, E., Canillas, A., Andújar, J.L. and Costa, J., J.Opt.Soc.Am. A 10, 713 (1993).Google Scholar