Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-12T09:52:50.601Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactor Issues Important for the Deposition of Selective Tungsten by Chemical Vapor Deposition Using the SiH4 Reduction of WF6

Published online by Cambridge University Press:  22 February 2011

David E. Kotecki ,
Evan G. Colgan  and
Alan Rose
David E. Kotecki
Affiliation:
IBM, Semiconductor Research and Development Center, Hopewell Junction, NY 12533
Evan G. Colgan
Affiliation:
IBM, Semiconductor Research and Development Center, Hopewell Junction, NY 12533
Alan Rose
Affiliation:
Texas Instruments Corporation, Dallas, TX 75265
Get access

Abstract

We have analyzed a single-wafer chemical vapor deposition (CVD) reactor used for the selective deposition of tungsten (W) by the silanc (SiH4) reduction of tungsten hcxafluoride (WF6). Results from a reactor model, which incorporates simplified heterogeneous reaction chemistry, arc compared to experimental data obtained from the same reactor to provide insight and understanding into reactor performance and define some of the trade-offs in the design of the reactor. A reactor for this process must provide: acold-wall temperature to suppress homogeneous reactions, a uniform wafer temperature to ensure uniform stress and resistivity in deposited films, and a uniform flux of SiH4 to the wafer surface to ensure uniform thickness of films. Maintaining a small internal volume in the reaction chamber was found to be beneficial for reducing both the quantity of rcactant gas at elevated temperatures and the residence time of the gas in the reactor, both of which lead to improved selectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 371
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For example, see the proceedings: Tungsten and Other Advanced Metals for VLSL /ULSI Applications (Mater. Res. Soc., Pittsburgh, PA) 1987, 1988, 1989, 1990, and 1991.Google Scholar
2. Colgan, E.G., J. Electrochcm. Soc. 140, (1993), in press.Google Scholar
3. Colgan, E.G. and Chapple-Sokol, J.D., J. Vac. Sci. Technol. B. 10, 1156 (1992).Google Scholar
4. Arora, R. and Pollard, R., J. Flectrochem. Soc., 138, 1523 (1991).Google Scholar
5. Mclncrncy, E.J., Mountsicr, T.W., Chin, B.L., and Broadbcnt, C.K., in Metallization for VLSI Applications, edited by Rana, V.V.S., Joshi, R.V., and Ohdomari, I. (Mater. Res. Soc. Proc, Pittsburgh, PA, 1992) pp. 61–68.Google Scholar
6. Kobayashi, N., Goto, II., and Suzuki, M., J. Appl. Phys. 69, 1013 (1991).Google Scholar
7. FIDAP, Fluid Dynamics International, Evanston, Illinois.Google Scholar
8. Werner, C., Ulacia, J.I., IIopfmann, F.C., and Flynn, P., J. Electrochem. Soc. 139, 556 (1992).Google Scholar
9. Ahn, K.Y., Fryer, P.M., Harper, J.M.E., Joshi, R.V., Miller, C.W. and Colgan, H.G. in Tungsten and Other Refractory Metals for VLSI Applications IV. edited by Blewer, R.S. and McConica, C. M. (Mater. Res. Soc. Proc, Pittsburgh, PA, 1989) pp. 35–46.Google Scholar