Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T19:46:50.286Z Has data issue: false hasContentIssue false
  • English
  • Français

Reaction Mechanism for Deposition of Silicon Nitride by Hot-Wire CVD with Ultra High Deposition Rate(>7 nm/s)

Published online by Cambridge University Press:  01 February 2011

Vasco Verlaan ,
Zomer Silvester Houweling ,
Karine van der Werf ,
Hanno D Goldbach  and
Ruud Schropp
Vasco Verlaan
Affiliation:
[email protected], Utrecht University, Physics and astronomy, Princetonplein 5, PO Box 80.000,, nl-3508 TA Utrecht, The Netherlands, Utrecht, Utrecht, nl-3508 TA, Netherlands, +31 30 253 2509, +31 30 254 3165
Zomer Silvester Houweling
Affiliation:
[email protected], Utrecht University, Princetonplein 5, PO Box 80.000,, Utrecht, N/A, NL-3508 TA,, Netherlands
Karine van der Werf
Affiliation:
[email protected], Utrecht University, Princetonplein 5, PO Box 80.000,, Utrecht, N/A, NL-3508 TA,, Netherlands
Hanno D Goldbach
Affiliation:
[email protected], Utrecht University, Princetonplein 5, PO Box 80.000,, Utrecht, N/A, NL-3508 TA,, Netherlands
Ruud Schropp
Affiliation:
[email protected], Utrecht University, Princetonplein 5, PO Box 80.000,, Utrecht, N/A, NL-3508 TA,, Netherlands
Get access

Abstract

The deposition process of silicon nitride (SiNx) by hot-wire chemical vapor deposition (HW CVD) is investigated by exploring the effects of process pressure and gas-flow ratio on the composition of the deposited SiNx films. Furthermore, experiments with D2 and deuterated silane were performed to gain further insight in the deposition reactions taking place. It appeared that the N/Si ratio in the layers determines the structural properties of the deposited films and since the volume concentration of Si-atoms in the deposited films is constant with N/Si ratio, the structure of the films are largely determined by the quantity of incorporated nitrogen. Because the decomposition rate of the ammonia source gas is much smaller than that of silane, the properties of the SiNx layers are largely determined by the ability to decompose the ammonia and to incorporate nitrogen into the growing material. It appeared that the process pressure greatly enhances the efficiency of the ammonia decomposition, presumably caused by the higher partial pressure of atomic hydrogen. With this knowledge we increased the deposition rate to a very high value of 7 nm/s for dense transparent SiNx films, much faster than conventional deposition techniques for SiNx can offer. Despite this high deposition rate good control over the composition is achieved by varying the flow ratio of the source gasses. Depositions performed with deuterated silane as a source gas reveal that almost all hydrogen in N-rich films originates from ammonia, probably caused by SiNx matrix formation by cross linking reactions

Keywords

chemical vapor deposition (CVD) (chemical reaction)catalyticchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A03-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Werf, C.H.M. van der, Goldbach, H.D., Loffler, J., Scarfo, A., Kylner, A.M.C., Stannowski, B., ArnoldBik, W.M., Weeber, A., Rieffe, H., Soppe, W.J., Rath, J.K. and Schropp, R.E.I.. Thin Solids Films. 501, (2006) 51.Google Scholar
[2] Holt, J.K., Goodwin, D.G., Gabor, A.M., Jiang, F., Stavola, M., Atwater, H.A.. Thin Solid Films. 430, (2003) 37 Google Scholar
[3] Verlaan, V., Werf, C.H.M. van der, Arnoldbik, W.M., Rieffe, H.C., Romijn, I.G., Soppe, W.J., Weeber, A.W., Goldbach, H.D. and Schropp, R.E.I.. Proc. 20th Photovoltiac Solar Energy Conference, Barcelona. 2DV2.41.1434–1437.Google Scholar
[4] Umemoto, H., Morimoto, T., Yamawaki, M., Masuda, Y., Masuda, A., Matsumura, H.. Thin Solid Films 430, (2003) 24.Google Scholar
[5] Lederman, A., Weber, U., Mukherjee, C., Schroeder, B., Thin Solid Films 395, (2001) 61 Google Scholar
[6] Wang, Q., Ward, S., Gedvilas, L., Keyes, B., Sanchez, E. and Wang, S. Applied Physics Letters, 84, (2004) 338.Google Scholar
[7] Aichberger, S. von. PHOTON international 3, (2004) 40–45 Google Scholar
[8] Schropp, R. E.I., Feenstra, K.F., Molenbroek, E.C., Meiling, H., and Rath, J.K., Philos. Mag B 76, (1997), 309.Google Scholar
[9] Veenendaal, P.A.T.T. van, Gijzeman, O.L.J., Rath, J.K. and Schropp, R.E.I.. Thin Solid Films 395, (2001) 194.Google Scholar
[10] Bik, W.M. Arnold and Habraken, F.H.P.M.. Rep. Prog. Phys. 56, (1993) 859 Google Scholar
[11] Maley, N.. Phys. Rev. B 46, (1992) 2078.Google Scholar
[12] Tomlin, S.G., J. Phys. D 5, (1972) 847.Google Scholar
[13] Hishikawa, Y., Nakamura, N. and Kuwano, Y. Jpn. J. Appl. Phys. 30, (1991) 1008 Google Scholar
[14] Bustarret, E., Souda, M., Habrard, M.C., Bruyere, J.C., Poulin, S., Gujrathi, S.C.. Phys. Rev. B 36, 12, (1998) 12.Google Scholar
[15] Hasegawa, S., He, L., Amano, Y. and Inokuma, T.. Physical review B 48, (1993) 5315.Google Scholar
[16] Stannowski, B., Rath, J.K. and Schropp, R.E.I.. Journal of applied Physics. 93, 5, (2003) 2618.Google Scholar
[17] Mahan, A.H., Dillon, A. C., Gedvillas, L.M., and Perkins, J.D.. Journal of applied physics 94, (2003) 2360.Google Scholar
[18] Moschner, J.D., Schmidt, J and Hezel, R.. Proc. 19th Photovoltiac Solar Energy Conference, Paris. 1082.Google Scholar
[19] Holt, J.K., Swiatek, M., Goodwin, D.G. and Atwater, H.A.. Journal of applied Physics. 92, 8, (2002) 4803 Google Scholar
[20] Umemoto, H., Ohara, K., Morita, D., Nozaki, Y., Masuda, A. and Matsumura, H.. J. Appl. Phys. 91,3(2002) 1650 Google Scholar
[21] Duan, H., Zaharias, G. and Bent, S.. Appl. Phys. Lett. 78, (2001) 1784.Google Scholar
[22] Umemoto, H., Ohara, K., Moromoto, T., Masuda, A. and Matsumura, H.. Jpn. J. Appl. Phys. 42, (2003) 5315.Google Scholar
[23] Umemoto, H., Morimoto, T., Yamawaki, M., Masuda, A. and Matsumura, H.. Thin Solid Films 430, (2003) 24.Google Scholar
[24] Habraken, F.H.P.M. and Kuiper, A.E.T.. Materials Science and Engineering R 12, (1994) 123–175.Google Scholar