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Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC

Published online by Cambridge University Press:  21 March 2011

Robert S. Okojie ,
Dorothy Lukco ,
Yuan L. Chen ,
David Spry  and
Carl Salupo
Robert S. Okojie
Affiliation:
NASA Glenn Research Center, Instrumentation and Controls Division 21000 Brookpark Road, M/S 77-1, Cleveland OH 44135; (216) 433-6522
Dorothy Lukco
Affiliation:
AYT 20001 Aerospace Parkway, Brookpark, OH 44142.
Yuan L. Chen
Affiliation:
Dynacs Engineering Company, Inc., 21000 Brookpark Rd. Bldg. 500 Brookpark, OH 44135
David Spry
Affiliation:
Akima Corporation, Fairview Park, OH 44126.
Carl Salupo
Affiliation:
Akima Corporation, Fairview Park, OH 44126.
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Abstract

The growth kinetics of thermally stable Ti(100nm)/TaSi2 (200nm)/Pt (300nm) metallization on 6H-SiC was studied after heat treatment in air up to 700°C. Scanning electron microscopy (SEM) of the contact surface morphology reveals a two-dimensional network of features that is attributed to non-uniform oxide growth associated with the multigrain structure of the platinum overlayer. Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) identified three important reaction zones after initial 30-minute anneal at 600°C in nitrogen. One is the formation of a platinum silicide overlayer resulting from TaSi2 decomposition. The second is titanium silicide formation adjacent to the decomposed TaSi2. The third is pseudo-epitaxial Ti5Si3 at the SiC interface. Specific contact resistance values ranging from 10−4–10−6 Ω-cm2, remained stable after 200 hours at 600°C in air. Activation energies of 1.03eV for platinum silicide oxidation and 1.96eV for Ti5Si3 are obtained from Arrhenius plots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.5
Copyright
Copyright © Materials Research Society 2001

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References

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