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RBS/Channelinc and Tem Analysis of Thin Sandwiched EPI-Layers of Germanium on Silicon

Published online by Cambridge University Press:  28 February 2011

M.L. Swanson ,
N.R. Parikh ,
E.C. Frey ,
G.S. Sandhu ,
W.K. Chu ,
J.-M. Baribeau Kechang ,
J. Mccaffrey  and
T.E. Jackman
M.L. Swanson
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
E.C. Frey
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
G.S. Sandhu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
W.K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
J. Mccaffrey
Affiliation:
National Research Council of Canada, Ottawa, Canada KIA 0R6
T.E. Jackman
Affiliation:
National Research Council of Canada, Ottawa, Canada KIA 0R6
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Abstract

Si/Ge/Si (100) structures consisting of a thin epitaxial layer of Ge (1-64 monolayers) on Si and covered with a 5 nm overlayer of epitaxial Si were grown by MBE. The layers were analyzed by Rutherford backscattering(RBS)-channeling and transmission electron microscopy (TEM). For structures containing 4 or 8 monolayers of Ge, the channeling <110> angular scans showed unusual features that could be due to imperfect steering of the ion beam in the thin Si overlayer. Cross sectional TEN showed that the Ge epitaxy was good for these Ge thicknesses, but that for an average Ge coverage of 16 monolayers, Ge hillocks up to 90 monolayers thick occurred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 581
Copyright
Copyright © Materials Research Society 1989

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