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Rapid Growth of Radish Sprouts Using Low Pressure O2 Radio Frequency Plasma Irradiation

Published online by Cambridge University Press:  21 May 2012

Satoshi Kitazaki ,
Kazunori Koga ,
Masaharu Shiratani  and
Nobuya Hayashi
Satoshi Kitazaki
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
Kazunori Koga
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
Masaharu Shiratani
Affiliation:
Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
Nobuya Hayashi
Affiliation:
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga-shi, Fukuoka 816-8580, Japan
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Abstract

We compared growth enhancement of radish induced by O2, air, and Ar plasma irradiation. The average length of radish sprouts cultivated for 4 days after O2 plasma irradiation is 70% longer than that of sprouts without irradiation. The O2 plasma irradiation is more effective in enhancing growth than air and Ar radio frequency plasma irradiation. Cell morphology and cell size of sprouts with O2 plasma irradiation is nearly the same as those without irradiation. These results suggest that plasma induced acceleration of cell proliferation brings about the rapid growth.

Keywords

biomedicalchemical reactionradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1469: Symposium WW – Plasma Processing and Diagnostics for Life Sciences. , 2012 , mrss12-1469-ww02-08
Copyright
Copyright © Materials Research Society 2012

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