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Raman Spectroscopy of Tin Films Deposited on Silicon (001) Substrate by Laser Physical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

K. Jagannadham ,
R. Chowdhury ,
N. Biunno  and
J. Narayan
K. Jagannadham
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, North Carolina 27695–7916
R. Chowdhury
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, North Carolina 27695–7916
N. Biunno
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, North Carolina 27695–7916
J. Narayan
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, North Carolina 27695–7916
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Abstract

We have carried out the Raman spectroscopy of titanium nitride films grown on Si(001) substrate by laser physical vapor deposition. The first order Raman defect induced acoustic and optical phonon peaks have been recorded for films grown at different substrate temperatures ranging from room temperature 25°C to 600°C.The ratio of the acoustic and the optical peak intensities and the width of the peaks are correlated with the nitrogen deficiency, crystalline size and stresses in the films. The results of Auger analysis, resistivity measurements and microstructural observations substantiate the finding that the stoichiometry of the films in terms of nitrogen concentration is improved at higher substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 193
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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