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Quasi-pyramidal texturing using phase-segregated masks

Published online by Cambridge University Press:  04 February 2011

Katherine L. Saenger
Affiliation:
IBM Semiconductor Research and Development Center, Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Roy Carruthers
Affiliation:
IBM Semiconductor Research and Development Center, Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Keith E. Fogel
Affiliation:
IBM Semiconductor Research and Development Center, Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Daniel Inns
Affiliation:
IBM Semiconductor Research and Development Center, Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Surface texturing processes for thin silicon solar cells ideally remove as little Si as possible relative to amount of topography generated. Here we describe how a micron-scale quasi-pyramidal texture may be achieved in Si layers with arbitrary crystallinity using a phase-segregated mask in combination with reactive ion etching (RIE). The Si to be textured is coated with a thin barrier layer followed by a layer of Al-Si alloy which phase-segregates into micron-sized regions of Al and Si after low temperature (<450 °C) annealing. One omponent of the mask is selectively etched away and the Si under the exposed barrier regions is etched by a process that gives the desired depth and lateral undercut. In this paper we show the dependence of the segregated Al-Si morphology on Al-Si alloy composition, thickness, and annealing conditions, and then present examples of texturing produced in single crystal Si by these masks in combination with CF4/O2 reactive ion etching.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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