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Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence

Published online by Cambridge University Press:  17 March 2011

R. Kalyanaraman ,
T.E. Haynes ,
D.C. Jacobson ,
H.-J. Gossmann  and
C.S. Rafferty
R. Kalyanaraman
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
T.E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D.C. Jacobson
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974
H.-J. Gossmann
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974
C.S. Rafferty
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Monte Carlo simulation codes such as TRIM or MARLOWE show a net displacement of interstitials with respect to vacancies from the Frenkel pairs produced in implant cascades. As a result, defect profiles after recombination have an excess of vacancies (Vex) in the shallow region of these implants, with excess interstitials near the projected range Rp. Typically, accurate estimates of the Vex distribution are computer intensive as the complete history of each damage cascade must be recorded. In this work we introduce a method for fast estimation of the Vex profile based on the derivative of the recoil distribution obtained from binary collision simulations using the Kinchen-Pease approximation for damage production. Also, Au labeling has been used to quantitatively analyze and compare the experimental depth profiles of Vex produced by implants of B, Si, and Ge into Si for a range of doses. Specific conditions like matching of the projected range of the implanted ions and matching of the number of Frenkel pairs created have been compared. This detailed study and comparison with simulation provides the first systematic, quantitative measurements of the Vex concentrations over such a range of species and doses. In analogy to the “+ number” for excess interstitials from ion implantation, we determine the range of “minus (-) numbers”, that is the number of excess vacancies per implanted ion for the different species. For Si it is constant in the dose range studied at -0.05, while for B it is -0.001 to -0.004 and for Ge, -0.1 to -0.2. The general shapes of the Vex profiles are similar to those obtained from simulation. Evidence is presented that one significant difference, namely an experimentally observed vacancy depletion near the surface, may be due to the diffusion and annihilation of vacancies at the surface. In addition, an increased nucleation probability of vacancy defects close to Rp may account for the growth of excess vacancies from close to Rp towards the surface with increasing implant dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B9.4
Copyright
Copyright © Materials Research Society 2000

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References

1. Holland, O.W., Xie, L., Nielsen, B., Zhou, D.S., J. Elect. Mat. 25, 99 (1996)10.1007/BF02666181Google Scholar
2. Kalyanaraman, R., Haynes, T.E., Venezia, V.C., Jacobson, D.C., Gossmann, H.-J., and Rafferty, C.S., appearing in App. Phys. Lett. V76, 2000.10.1063/1.126653Google Scholar
3. Ziegler, J.F., Biersack, J.P., Littmark, U., The Stopping and Ranges of Ions in Solids, (pergamon press, New York, 1985).Google Scholar
4. Robinson, M.T. and Torrens, I.M., Phys. Rev. B 9, 5008 (1974).10.1103/PhysRevB.9.5008Google Scholar
5. Mazzone, A.M., Phys. Stat. Sol. (a) 95, 149 (1986).10.1002/pssa.2210950118Google Scholar
6.TRIM simulations of As and Ge indicate a nearly 20% mismatch in range for identical energies. This is an unexpected result given the similar masses of the two ions. For this work, SRIM simulations of 3.25 MeV As+ were used to calculate the damage production, while experiments were performed with 3.25 MeV 74Ge to separate out any chemical effects that could arise from using As.Google Scholar