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Pulsed Laser Modification of the Growth of Ge Quantum Dots on Si(100)-(2x1)

Published online by Cambridge University Press:  20 July 2012

Ali Oguz Er  and
Hani E. Elsayed-Ali
Ali Oguz Er
Affiliation:
Department of Physics, Old Dominion University, Norfolk, VA USA 23529
Hani E. Elsayed-Ali*
Affiliation:
Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA USA 23529
*
*E-mail addresses: [email protected]; [email protected]
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Abstract

Ge quantum dots were grown on Si(100)-(2x1) using pulsed laser deposition while the laser is also exciting the substrate during film growth. The growth mode and morphology was probed by scanning tunneling microscopy (STM). Epitaxial growth at a substrate temperature of ∼250 °C was achieved by using laser excitation of the substrate. The morphology of the quantum dots changed with increased laser excitation energy density although the faceting of the individual quantum dots remained the same. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed.

Keywords

ablationthin filmself-assembly
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1455: Symposium II – Nanoscale Materials Modification by Photon, Ion, and Electron Beams , 2012 , mrss12-1455-ii03-08
Copyright
Copyright © Materials Research Society 2012

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