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Pulsed Excimer Laser (308 nm) Annealing Of Ion Implanted Silicon and Solar Cell Fabrication

Published online by Cambridge University Press:  15 February 2011

D. H. Lowndes ,
J. W. Cleland ,
W. H Christie ,
R. E EBY ,
G. E. Jellison Jr. ,
J. Narayan ,
R. D. Westbrook ,
R. F. Wood ,
J. A. Nilson  and
S. C. Dass
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. W. Cleland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
W. H Christie
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. E EBY
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. D. Westbrook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. A. Nilson
Affiliation:
Lumonics, Inc., Kanata (Ottawa), Ontario, K2K 1Y3, Canada
S. C. Dass
Affiliation:
Lumonics, Inc., Kanata (Ottawa), Ontario, K2K 1Y3, Canada
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Abstract

A pulsed ultraviolet excimer laser (XeCl, 308 nm wavelength, 40 nsec FWHM pulse duration) has been successfully used for laser annealing of both boron- and arsenic-implanted silicon. TEM, SIMS, and sheet electrical measurements are used to characterize specimens. C-V and I-V measurements demonstrate that near-ideal p-n junctions are formed (diode perfection factor A = 1.2). Electrical activation of implanted ions by single laser pulses is essentially complete for energy densities Eℓ≥ 1.4 J/cm2 , far below the threshold for substantial surface damage ∽4.5 J/cm2. Melting model calculations are in good agreement with observed thresholds for dopant redistribution and for epitaxial regrowth. Changes in annealing behavior resulting from multiple (1,2,5) laser pulses are also reported. Finally, we demonstrate the use of scanned overlapping excimer laser pulses for fabrication of large area (2 cm2 ) solar cells with good performance characteristics. In contrast to pulsed ruby laser annealing, high open circuit voltages can be obtained without the use of substrate heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 407
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy, under contract W–7405–eng–26 with the Union Carbide Corporation.

References

REFERENCES

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