Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T05:09:17.488Z Has data issue: false hasContentIssue false
  • English
  • Français

Prospects for dielectric constant reduction in integrated circuits interconnects

Published online by Cambridge University Press:  19 June 2014

Maxime Darnon ,
Nicolas Posseme ,
Thierry Chevolleau  and
Thibaut L. David
Maxime Darnon
Affiliation:
Univ. Grenoble Alpes, LTM, F-38042 Grenoble-FRANCE CNRS, LTM, F-38042 Grenoble-FRANCE CEA-Leti-Minatec, LTM, F-38054 Grenoble-FRANCE
Nicolas Posseme
Affiliation:
CEA-Leti-Minatec, F-38054 Grenoble-FRANCE
Thierry Chevolleau
Affiliation:
Univ. Grenoble Alpes, LTM, F-38042 Grenoble-FRANCE CNRS, LTM, F-38042 Grenoble-FRANCE CEA-Leti-Minatec, LTM, F-38054 Grenoble-FRANCE
Thibaut L. David
Affiliation:
CEA-Leti-Minatec, F-38054 Grenoble-FRANCE
Get access

Abstract

To improve the integrated circuits’ performance and continue the downscaling of dimensions, it is necessary to use low dielectric constant materials as interconnects insulators. Current porous SiCOH low-k dielectrics are now reaching their limits since their porosity enables the diffusion of species that modify the inner surface of the pores. To further reduce the dielectric constant, it is necessary to change paradigm in interconnects fabrication. In this paper, we discuss the most promising innovations in terms of process, materials and architectures to reduce the interconnects insulators dielectric constant.

Keywords

dielectricporosityreactive ion etching
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1692: Symposium CC – New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies , 2014 , mrss14-1692-cc01-01
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chen, F., Gardner, D., Electron Device Letters, IEEE 19(12) (1998) 508–510.Google Scholar
Saraswat, K., Mohammadi, F., Solid-State Circuits, IEEE Journal of 17(2) (1982) 275–280.CrossRefGoogle Scholar
Bohr, M., in: Electron Devices Meeting, 1995. IEDM ’95., International, 1995, pp. 241–244.Google Scholar
International Technological Roadmap for Semiconductors, www.itrs.net Google Scholar
Fitzpatrick, R., University of Texas at Austin, 1996. http://farside.ph.utexas.edu/teaching/jk1/lectures/index.htm Google Scholar
Posseme, N., Chevolleau, T., Joubert, O., Vallier, L., Rochat, N., J. Vac. Sci. Technol. B 22(6) (2004) 2772–2784.CrossRefGoogle Scholar
Yonekura, K., Sakamori, S., Goto, K., Matsuura, M., Fujiwara, N., Yoneda, M., J. Vac. Sci. Technol. B 22(2) (2004) 548–553.Google Scholar
Hua, X., Kuo, M. S., Oehrlein, G. S., Lazzeri, P., Iacob, E., Anderle, M., Inoki, C. K., Kuan, T. S., Jiang, P., Wu, W. L., J. Vac. Sci. Technol. B 24(3) (2006) 1238–1247.Google Scholar
Posseme, N., Chevolleau, T., David, T., Darnon, M., Louveau, O., Joubert, O., Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 25(6) (2007) 1928 –1940.CrossRefGoogle Scholar
Xu, S., Qin, C., Diao, L., Gilbert, D., Hou, L., Wiesnoski, A., Busch, E., McGowan, R., White, B., Weber, F., J. Vac. Sci. Technol. B 25(1) (2007) 156–163.Google Scholar
Kondo, S., Fukaya, K., Yamada, K., Miyazaki, T., Fujita, M., Abe, D., Kunisaki, S., Enomoto, T., Tominaga, S., Microelectronic Engineering 84(11) (2007) 2615 – 2619.Google Scholar
Dubois, C., Sylvestre, A., Chaabouni, H., Farcy, A., Microelectronic Engineering 87(3) (2010) 333 – 336.Google Scholar
Darnon, M., Casiez, N., Chevolleau, T., Dubois, G., Volksen, W., Frot, T. J., Hurand, R., David, T. L., Posseme, N., Rochat, N., et al. ., J. Vac. Sci. Technol. B 31(1) (2013) 011207.CrossRefGoogle Scholar
Iacopi, F., Brongersma, S., Vandevelde, B., O’Toole, M., Degryse, D., Travaly, Y., Maex, K., Microelectronic Engineering 75(1) (2004) 54 – 62.CrossRefGoogle Scholar
Lépinay, M., Djourelov, N., Marinov, H., Broussous, L., Courouble, K., Licitra, C., Bertin, F., Rouessac, V., Ayral, A., Journal of Porous Materials (2014) 1–10.Google Scholar
Darnon, M., Chevolleau, T., David, T., Ducote, J., Posseme, N., Bouyssou, R., Bailly, F., Perret, D., Joubert, O., J. Vac. Sci. Technol. B 28(1) (2010) 149.CrossRefGoogle Scholar
Worsley, M. A., Bent, S. F., Gates, S. M., Fuller, N. C., Volksen, W., Steen, M., Dalton, T., J. Vac. Sci. Technol. B 23(2) (2005) 395–405.CrossRefGoogle Scholar
Baklanov, M. R., de Marneffe, J.-F., Shamiryan, D., Urbanowicz, A. M., Shi, H., Rakhimova, T. V., Huang, H., Ho, P. S., Journal of Applied Physics 113(4) (2013) 041101–41.CrossRefGoogle Scholar
Darnon, M., Chevolleau, T., Licitra, C., Rochat, N., Zocco, J., J. Vac. Sci. Technol. B 31(6) (2013) 061206.CrossRefGoogle Scholar
Posseme, N., Vallier, L., Kao, C., Licitra, C., Petit-Etienne, C., Mannequin, C., Gonon, P., Belostotskiy, S., Pender, J., Banola, S., et al. ., in: Interconnect Technology Conference (IITC), 2013 IEEE International, IEEE, 2013, pp. 1–3.Google Scholar
Iacopi, F., Choi, J. H., Terashima, K., Rice, P. M., Dubois, G., Phys. Chem. Chem. Phys. 13 (2011) 3634–3637.CrossRefGoogle Scholar
Stauss, S., Mori, S., Muneoka, H., Terashima, K., Iacopi, F., J. Vac. Sci. Technol. B 31(6) (2013) 061202.Google Scholar
Baklanov, M., Iacopi, F., Vanhaelemeersch, S., Protective Treatment for Porous Materials, US patent 8,540,890 B2, issued Sep. 24, 2013.Google Scholar
Zhang, L., Ljazouli, R., Lefaucheux, P., Tillocher, T., Dussart, R., Mankelevich, Y. A., de Marneffe, J.-F., de Gendt, S., Baklanov, M. R., ECS Journal of Solid State Science and Technology 2(6) (2013) N131–N139.CrossRefGoogle Scholar
Dussart, R., Tillocher, T., Lefaucheux, P., Boufnichel, M., in: J. Phys. D: Appl. Phys., 47 (2014) 123001.CrossRefGoogle Scholar
Chang, T. C., Liu, P. T., Mor, Y. S., Tsai, T. M., Chen, C. W., Mei, Y. J., Pan, F. M., Wu, W. F., Sze, S. M., J. Vac. Sci. Technol. B 20(4) (2002) 1561–1566.CrossRefGoogle Scholar
Chaabouni, H., in: Materials for Advanced Metallization, 2007.Google Scholar
Mor, Y., Chang, T., Liu, P., Tsai, T., Chen, C., Yan, S. T., Chu, C. J., Wu, W., Pan, F., Lur, W., Sze, S., J. Vac. Sci. Technol. B 20(4) (2002) 1334–1338.CrossRefGoogle Scholar
Rajagopalan, T., Lahlouh, B., Lubguban, J., Biswas, N., Gangopadhyay, S., Sun, J., Huang, D., Simon, S., Toma, D., Butler, R., Applied Surface Science 252(18) (2006) 6323 – 6331.Google Scholar
Gorman, B. P., Orozco-Teran, R. A., Zhang, Z., Matz, P. D., Mueller, D. W., Reidy, R. F., J. Vac. Sci. Technol. B 22(3) (2004) 1210.CrossRefGoogle Scholar
Xie, B., Choate, L., Muscat, A., Microelectronic Engineering 80 (2005) 349–352.CrossRefGoogle Scholar
RamachandraRao, V. S., Gracias, D. H., Replenishment of Surface Carbon and Surface Passivation of low-k Porous Silicon-Based Dielectric Materials, US patent 7,005,390 B2, issued Feb. 28 2006.Google Scholar
Volksen, W., Miller, R. D., Dubois, G., Chemical Reviews 110(1) (2010) 56–110.CrossRefGoogle Scholar
Volksen, W., Magbitang, T. P., Miller, R. D., Purushothaman, S., Cohen, S. A., Nakagawa, H., Nobe, Y., Kokubo, T., Dubois, G. J. M., Journal of The Electrochemical Society 158(7) (2011) G155–G161.CrossRefGoogle Scholar
Matsuda, Y., Rathore, J. S., Interrante, L. V., Dauskardt, R. H., Dubois, G., ACS Applied Materials & Interfaces 4(5) (2012) 2659–2663.CrossRefGoogle Scholar
Volksen, W., Purushothaman, S., Darnon, M., Lofaro, M. F., Cohen, S. A., Doyle, J. P., Fuller, N., Magbitang, T. P., Rice, P. M., Krupp, L. E., Nakagawa, H., Nobe, Y., Kokubo, T., Dubois, G. J. M., ECS Journal of Solid State Science and Technology 1(5) (2012) N85–N90.Google Scholar
Bruce, R. L., Engelmann, S., Purushothaman, S., Volksen, W., Frot, T. J., Magbitang, T., Dubois, G., Darnon, M., Vol. 46, 2013, p. 265303.CrossRefGoogle Scholar
Moon, C. S., Takeda, K., Sekine, M., Setsuhara, Y., Shiratani, M., Hori, M., J. Appl. Phys. 107(11) (2010) 113310 Google Scholar
Vanstreels, K., Pantouvaki, M., Ferchichi, A., Verdonck, P., Conard, T., Ono, Y., Matsutani, M., Nakatani, K., Baklanov, M. R., J. Appl. Phys. 109(7) (2011)CrossRefGoogle Scholar
Pantouvaki, M., Huffman, C., Zhao, L., Heylen, N., Ono, Y., Nakajima, M., Nakatani, K., Beyer, G. P., Baklanov, M. R., Jpn. J. Appl. Phys. 50(4) (2011) 04DB01.CrossRefGoogle Scholar
Gu, X., Nemoto, T., Tomita, Y., Shirotori, A., Duyos-Mateo, R., Miyatani, K., Saito, A., Kobayashi, Y., Teramoto, A., Kuroki, S., et al. ., in: Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, IEEE, 2011, pp. 1–3.Google Scholar
Hirai, M., Akiyama, Y., Koga, K., Kawakami, H., Nakatani, K., Tada, M., in: Interconnect Technology Conference (IITC), 2012 IEEE International, IEEE, 2012, pp. 1–3.Google Scholar
Fuard, D., Joubert, O., Vallier, L., Assous, M., Berruyer, P., Blanc, R., J. Vac. Sci. Technol. B 19(6) (2001) 2223–2230.CrossRefGoogle Scholar
Pons, M., Pelletier, J., Joubert, O., J. Appl. Phys. 75(9) (1994) 4709–4715.CrossRefGoogle Scholar
Posseme, N., Chevolleau, T., Joubert, O., Vallier, L., Mangiagalli, P., J. Vac. Sci. Technol. B 21(6) (2003) 2432–2440.CrossRefGoogle Scholar
Gronbeck, D., Gallagher, M., Calvert, J., Adams, T., Electronic Device Manufacture, US patent 20,040,130,032, Jul. 8, 2004 Google Scholar
Eon, D., Darnon, M., Chevolleau, T., David, T., Vallier, L., Joubert, O., J. Vac. Sci. Technol. B 25(3) (2007) 715–720.CrossRefGoogle Scholar
Darnon, M., Chevolleau, T., David, T., Posseme, N., Ducote, J., Licitra, C., Vallier, L., Joubert, O., Torres, J., J. Vac. Sci. Technol. B 26(6) (2008) 1964–1970.Google Scholar
Jousseaume, V., Assous, M., Zenasni, A., Maitrejean, S., Remiat, B., Leduc, P., Trouve, H., Cornec, C. L., Fayolle, M., Roule, A., Ciaramella, F., Bouchu, D., David, T., Roman, A., Scevola, D., Morel, T., Rebiscoul, D., Prokopowicz, G., Jackman, M., Guedj, C., Louis, D., in: Interconnect Technology Conference, 2005, pp. 60–62.Google Scholar
Ducote, J., David, T., Posseme, N., Chevolleau, T., Gall, S., Zenasni, A., Jousseaume, V., Inglebert, R., Verove, C., Joubert, O., et al. ., in: 55th International AVS Symposium & Topical Conferences, 2008.Google Scholar
Frot, T., Volksen, W., Magbitang, T., Miller, D., Purushothaman, S., Lofaro, M., Bruce, R., Dubois, G., in: Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, 2011, pp. 1–3.Google Scholar
Frot, T., Volksen, W., Magbitang, T., Krupp, L., Rice, P., Purushothaman, S., Lofaro, M., Cohen, S., Bruce, R. L., Dubois, G., in: Interconnect Technology Conference (IITC), 2012 IEEE International, 2012, pp. 1–3.Google Scholar
Frot, T., Volksen, W., Purushothaman, S., Bruce, R. L., Magbitang, T., Miller, D. C., Deline, V. R., Dubois, G., Advanced Functional Materials 22(14) (2012) 3043–3050.CrossRefGoogle Scholar
Lin, Q., Nelson, A., Chen, S.-T., Brock, P., Cohen, S. A., Davis, B., Kaplan, R., Kwong, R., Liniger, E., Neumayer, D., Patel, J., Shobha, H., Sooriyakumaran, R., Purushothaman, S., Miller, R., Spooner, T., Wisnieff, R., Jpn. J. Appl. Phys. 49(5) (2010) 05FB02.Google Scholar
Lin, Q., Chen, S. T., Nelson, A., Brock, P., Cohen, S., Davis, B., Fuller, N., Kaplan, R., Kwong, R., Liniger, E., Neumayer, D., Patel, J., Shobha, H., Sooriyakumaran, R., Purushothaman, S., Spooner, T., Miller, R., Allen, R., Wisnieff, R., in: Proc. SPIE, 7639, 2010, pp. 76390J–9.CrossRefGoogle Scholar
Lee, S.-K., Chun, S.-S., Hwang, C., Lee, W.-J., Jpn. J. Appl. Phys. 36(1) (1997) 50–55.CrossRefGoogle Scholar
Wu, F., Levitin, G., Hess, D. W., ACS Applied Materials & Interfaces 2(8) (2010) 2175–2179.Google Scholar
Wu, F., Levitin, G., Hess, D. W., J. Vac. Sci. Technol. B 29(1) (2011) 011013.CrossRefGoogle Scholar
Wu, F., Hess, D. W., Levitin, G., Low Temperature Metal Etching and Patterning, US patent 2011/0275220, Nov. 10, 2011.Google Scholar
Gaillard, F., de Pontcharra, J., Gosset, L., Lyan, P., Bouchu, D., Daamen, R., Louveau, O., Besson, P., Passemard, G., Torres, J., Microelectronic Engineering 83 (11–12) (2006) 2309 – 2313.CrossRefGoogle Scholar
Pantouvaki, M., Humbert, A., VanBesien, E., Camerotto, E., Travaly, Y., Richard, O., Willegems, M., Volders, H., Kellens, K., Daamen, R., Hoofman, R., Beyer, G., Microelectronic Engineering 85(10) (2008) 2071 – 2074.CrossRefGoogle Scholar
Noguchi, J., Sato, K., Konishi, N., Uno, S., Oshima, T., Ishikawa, K., Ashihara, H., Saito, T., Kubo, M., Tamaru, T., Yamada, Y., Aoki, H., Fujiwara, T., Electron Devices, IEEE Transactions on 52(3) (2005) 352–359.Google Scholar
Nitta, S., Edelstein, D., Ponoth, S., Clevenger, L., Liu, X., Standaert, T., in: Interconnect Technology Conference, 2008. IITC 2008. International, IEEE, 2008, pp. 191–192.Google Scholar
Ponoth, S., Horak, D., Nitta, S., Colburn, M., Breyta, G., Huang, E., Sucharitaves, J. T., Landis, H., Lisi, A., Liu, X., et al. ., in: Meeting Abstracts, no. 28, The Electrochemical Society, 2008, pp. 2074–2074.Google Scholar
Pantouvaki, M., Sebaai, F., Kellens, K., Goossens, D., Vereecke, B., Versluijs, J., Besien, E. V., Caluwaerts, R., Marrant, K., Bender, H., Moussa, A., Struyf, H., Beyer, G. P., Microelectronic Engineering 88(7) (2011) 1618 – 1622.Google Scholar
Press Release (May 2007). http://www-03.ibm.com/press/us/en/pressrelease/21473.wss Google Scholar