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The Properties of Mfmos and MFOS Capacitors with High K Gate Oxides for one Transistor Memory Applications

Published online by Cambridge University Press:  21 March 2011

Tingkai Li ,
Sheng Teng Hsu ,
Hong Ying  and
Bruce Ulrich
Tingkai Li
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Hong Ying
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Bruce Ulrich
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
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Abstract

MFMOS and MFOS (M: Metal, F: Ferroelectrics, O: Oxide, S: Silicon) capacitors with high k gate oxides, such as ZrO2, HfO2 thin films, have been fabricated for one transistor memory applications. Experimental results showed that ZrO2 and HfO2 have no serious reaction or diffusion into silicon substrate. Due to their high dielectric constant, the operation voltages of MFMOS capacitors are reduced. The MFMOS capacitor exhibits 2V memory window. For lead germanium oxide (PGO) on ZrO2 and PGO on HfO2 MFOS memory cells the memory windows are 1.8 V and 1.6 V, respectively, which are large enough for one-transistor memory applications. The basic mechanism for one-transistor memory applications was also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.10.1
Copyright
Copyright © Materials Research Society 2001

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