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Progress in the Growth and Characterization of Ge Quantum Dots and Islands

Published online by Cambridge University Press:  01 February 2011

J.-M. Baribeau ,
N.L. Rowell  and
D.J. Lockwood
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
N.L. Rowell
Affiliation:
Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
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Abstract

We review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F5.1
Copyright
Copyright © Materials Research Society 2005

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