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Progress in High Conversion Efficiency a-Si/μc-Si Tandem Solar Cells and Modules

Published online by Cambridge University Press:  12 June 2012

Mitsuhiro Matsumoto ,
Youichirou Aya ,
Mitsuoki Hishida ,
Shigeo Yata ,
Wataru Shinohara ,
Isao Yoshida ,
Daiji Kanematsu ,
Akira Terakawa ,
Masahiro Iseki  and
Makoto Tanaka
Mitsuhiro Matsumoto
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Youichirou Aya
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Mitsuoki Hishida
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Shigeo Yata
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Wataru Shinohara
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Isao Yoshida
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Daiji Kanematsu
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Akira Terakawa
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Masahiro Iseki
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
Makoto Tanaka
Affiliation:
Next-Generation Energy Device Development Center, Panasonic Corporation, 180, Ohmori Anpachi-Cho, Anpachi-Gun, Gifu 503-0195 Japan
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Abstract

A fabrication technology for high-quality, device-grade microcrystalline silicon (μc-Si) thin film with a higher deposition rate has been required to reduce the production cost of amorphous silicon (a-Si)/μc-Si tandem modules. Localized Plasma Confinement CVD (LPC-CVD) has been proposed as one solution to this problem. It was found that this CVD is suitable for the deposition of high crystalline fractions and (220) orientation in the development of small-to-medium-size substrates. Since then, we have been developing high-rate deposition technology for production-size substrates by using the essence of LPC-CVD and evaluation techniques for μc-Si materials and plasma. A stabilized module efficiency of 11.1% was reported with a very high deposition rate on a production-size substrate. To improve conversion efficiency, we have been focusing on elemental technologies as well as high-rate deposition technology. Stabilized conversion efficiency of 12.2% for small-size cells (1 cm2) and stabilized module conversion efficiency of 10.7% for production-size substrates were achieved.

Keywords

photovoltaicplasma-enhanced CVD (PECVD) (deposition)thin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 3 - 13
Copyright
Copyright © Materials Research Society 2012

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