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Processing of Dense Nanocrystalline Zirconia Thin Films by Sol-Gel

Published online by Cambridge University Press:  01 February 2011

Christoph Peters ,
Matthias Bockmeyer ,
Reinhard Krüger ,
André Weber  and
Ellen Ivers-Tiffée
Christoph Peters
Affiliation:
[email protected], University of Karlsruhe (TH), Institute of Materials for Electrical Engineering, Adenauerring 20b, Karlsruhe, N/A, 76131, Germany
Matthias Bockmeyer
Affiliation:
[email protected], Fraunhofer Institute for Silicate Research, Neunerplatz 2, Würzburg, N/A, 97082, Germany
Reinhard Krüger
Affiliation:
[email protected], Fraunhofer Institute for Silicate Research, Neunerplatz 2, Würzburg, N/A, 97082, Germany
André Weber
Affiliation:
[email protected], University of Karlsruhe (TH), Institute of Materials for Electrical Engineering, Adenauerring 20b, Karlsruhe, N/A, 76131, Germany
Ellen Ivers-Tiffée
Affiliation:
[email protected], University of Karlsruhe (TH), Institute of Materials for Electrical Engineering, Adenauerring 20b, Karlsruhe, N/A, 76131, Germany
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Abstract

Via metal organic deposition (MOD) sapphire substrates were multiple dip-coated with a molecular dispersive 8 mol% Y2O3 doped ZrO2 (8YSZ) sol to prepare dense, crack-free thin films. The thin films were consecutively exposed to a tempering program with several rapid thermal annealing (RTA) steps and a final dwell temperature between 500 °C and 1400 °C for 24 h. Grain growth, phase, stoichiometry and macroscopic density of the thin films were analyzed by XRD and SEM. Grain sizes ranged between a few nanometers in diameter at 500 °C and several hundreds of nanometers at 1400 °C.

Keywords

sol-gelnanoscaleionic conductor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG16-01
Copyright
Copyright © Materials Research Society 2006

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