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Preparation of Smooth Zinc Oxide Thin Film via Liquid Phase Reaction with Cation Additives
Published online by Cambridge University Press: 15 March 2011
Abstract
ZnO thin films were deposited in a solution with Zn(NO3)2 and DMAB from 60 to 80°C. The effects of cation additives such as Mg, Ga and Al in a aqueous solution were investigated on surface morphology, crystallographic structure and growth rate. By adding 1E−4 mol/l of Ga or Al, the growth rate was enhanced from 0.13 m/h to 0.35-0.38 m/h. In addition, the surface morphology became flat in the case of Al addition.
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References
REFERENCES
3.
Gorla, C.R., Emanetoglu, N.W., Liang, S., Mayo, W.E., Lu, Y., Wraback, M. and Shen, H., J. Appl. Phys.
85, pp.2595–2602 (1999).Google Scholar
4.
Koch, M.H., Timbrell, P.Y. and Lamb, R.N., Semiconduct. Sci. Technol.
10, pp.1523–1527 (1995).Google Scholar
5.
Look, D.C., Reynolds, D.C., Litton, C.W., Jones, R.L., Easton, D.B. and Cantwell, G., Appl. Phys. Lett.
81, pp.1830–1832 (2002).Google Scholar
8.
Oh, B.Y., Jeong, M.C., Ham, M.H. and Myoung, J.M., Semicond. Sci. Tech.
22, pp.608–612 (2007).Google Scholar
10
Wang, C.X., Yang, G.W., Zhang, T.C., Liu, H.W., Han, Y.H., Luo, J.F., Gao, C.X. and Zou, G.T., Diamond Relat. Mater.
12, pp.1548–1552 (2003).Google Scholar
12.
Furuta, M., Hiramatsu, T., Matsuda, T., Li, C., Furuta, H. and Hirao, T., J. Non-Crystalline Solids
354, pp.1926–1931 (2008).Google Scholar
13.
Oh, M.S., Hwang, D.K., Seong, D.J., Hwang, H.S., Park, S.J. and Kim, E.D., J. Electrochem. Soc.
155, pp.D599–D603 (2008).Google Scholar
14.
Chao, L.C., Hu, H.T., Yang, S.H. and Fan, Y.C., Thin Solid Films
516, pp.6305–6309 (2008).Google Scholar
15.
El-Yadouni, A., Boudrioua, A., Loulergue, J.C., Sallet, V. and Triboulet, T., Optical Materials
27, pp.1391–1395 (2005).Google Scholar
16.
Sukur, E., Nishiyama, S. and Hattori, T., J. Ceram. Soc. of Japan
109, pp.1–3 (2001).Google Scholar
19.
Greene, L.E., Law, M., Goldberger, J., Kim, F., Johnson, J.C., Zhang, Y., Saykally, R.J. and Yang, P., Angew. Chem. Int. Ed.
42, pp.3031–3034 (2003).Google Scholar
21.
Zhang, H., Yang, D., Li, D., Ma, X., Li, S. and Que, D., Cryst. Growth Des.
5, pp.547–550 (2005)Google Scholar
22.
Zhang, T., Dong, W., M. Keeter-Brewer, Konar, S., Njabon, R.N. and Tian, Z. Ryan, J. Am. Chem. Soc.
128, pp.10960–10968 (2006).Google Scholar
23.
Sahoo, T., Ju, J.-W., Kannan, V., Kim, J.S., Yu, Y.-T., Han, M.-S., Park, Y.-S. and Lee, I.-H., Mater. Res. Bull.
43, pp.502–509 (2008).Google Scholar
27.
Cheng, H.C., Chen, C.F. and Tsay, C.Y., Jpn. J. Appl. Phys.
46, p.4265–4267 (2007).Google Scholar
29.
Saito, N., Haneda, H. and Koumoto, K., J. Ceram. Soc. of Japan
115, pp.850–855 (2007).Google Scholar
30.
Saito, Y., Shiga, T., Kokubun, A., Kawai, T. and Unuma, H., J. Ceram. Soc. of Japan
115, pp.938–940 (2007).Google Scholar