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Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

Published online by Cambridge University Press:  01 February 2011

Do Yun Kim ,
Ihsanul Afdi Yunaz ,
Shunsuke Kasashima ,
Shinsuke Miyajima  and
Makoto Konagai
Do Yun Kim
Affiliation:
[email protected], Tokyo Institute of Technology, Physical electronics, Tokyo, Japan
Ihsanul Afdi Yunaz
Affiliation:
[email protected], Tokyo Institute of Technology, Physical electronics, Tokyo, Japan
Shunsuke Kasashima
Affiliation:
[email protected], Tokyo Institute of Technology, Physical electronics, Tokyo, Japan
Shinsuke Miyajima
Affiliation:
[email protected], Tokyo Institute of Technology, Physical electronics, Tokyo, Japan
Makoto Konagai
Affiliation:
[email protected], Tokyo Institute of Technology, Physical electronics, Tokyo, Japan
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Abstract

Optical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

Keywords

amorphousphotovoltaicplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A07-07
Copyright
Copyright © Materials Research Society 2010

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