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Preparation Of Low-Density Xerogels At Ambient Pressure For Low K Dielectrics

Published online by Cambridge University Press:  15 February 2011

D. M. Smith ,
J. Anderson ,
C. C. Cho ,
G. P. Johnston  and
S. P. Jeng
D. M. Smith
Affiliation:
UNM/NSF Center for Micro-Engineered Ceramics, Albuquerque, NM
J. Anderson
Affiliation:
UNM/NSF Center for Micro-Engineered Ceramics, Albuquerque, NM
C. C. Cho
Affiliation:
Texas Instruments, Dallas, TX.
G. P. Johnston
Affiliation:
NanoPore Incorporated, Albuquerque, NM
S. P. Jeng
Affiliation:
Texas Instruments, Dallas, TX.
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Abstract

Low density silica xerogels have many properties which suggest their use as a low dielectric constant material. Recent process improvements to control capillary pressure and strength by employing aging and pore chemistry modification, such that shrinkage is minimal during ambient pressure drying, have eliminated the need for supercritical drying. Although xerogels offer advantages for intermetal dielectric (IMD) applications because of their low dielectric constant (<2), high temperature limit, and compatibility with existing microelectronics precursors and processes, they suffer from unanswered questions. These include: 1) are all pores smaller than microelectronics features, 2) what are their mechanical properties (for processing and particle generation), and 3) what is their thermal stability. We have produced bulk xerogels under similar conditions to those used for films and studied the effect of density on the pore size distribution and bulk modulus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 261
Copyright
Copyright © Materials Research Society 1995

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References

1. Jeng, S.P., Chang, M.-C., Kroger, T., McAnally, P. and Havemann, R. H., Proceeding of the 1994 Symposium, on VLSI Technology, p. 73 (1994).Google Scholar
2. Deshpande, R., Smith, D.M., Brinker, C.J., US Patent Application, (1992).Google Scholar
3. Smith, D. M, Stein, D.J., Anderson, J.M., and Ackerman, W.C., J. of Non-Crystalline Solids, in press.Google Scholar
4. Smith, D.M,Anderson, J.M., Cho, C.C. and Gnade, B.E. in Advances in Porous Materials edited by Komareni, S., Smith, D.M. and Beck, J.S., (Mater.Res.Soc. 371, Pittsburgh, PA, 1995) 261.Google Scholar
5. Hrubesh, L.W., Keene, L.E., and Latorre, V.R., J. Mater.Res., 8, 1736, (1993).Google Scholar
6. Smith, D. M, Scherer, G.W., and Anderson, J.M., J. of Non-Crystalline Solids, in press.Google Scholar
7. Stein, D., MS Thesis, University of New Mexico, (1995)Google Scholar
8. Hua, D.W., Anderson, J., Haereid, S., Smith, D.M. and Beaucage, G., Better Ceramics Through Chemistry VI edited by Cheetham, A.K., Brinker, C.J., Mecartney, M.L., and Sanchez, C., (Mater.Res.Soc. 346, Pittsburgh, PA, 1994) 985.Google Scholar