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Preparation of a Reduced Layered Tungstic Acid HxW2O7 via Acid Treatment of Bi2W2O9 in the Presence of Sn2+ Ions

Published online by Cambridge University Press:  01 February 2011

Seiichi Tahara
Affiliation:
[email protected], Waseda University, School of Science and Engneering, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo, 169-8555, Japan, 81-3-5286-3204, 81-3-5286-3204
Takakazu Minato
Affiliation:
[email protected], Waseda University, Tokyo, 169-8555, Japan
Nobuhiro Kumada
Affiliation:
[email protected], University of Yamanashi, Yamanashi, 400-8511, Japan
Shigenobu Hayashi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Ibaraki, 305-8565, Japan
Yoshiyuki Sugahara
Affiliation:
[email protected], Waseda University, Tokyo, 169-8555, Japan
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Abstract

A reduced layered tungstic acid with a double-octahedral structure was prepared by acid treatment of an Aurivillius-type Bi2W2O9 in the presence of Sn2+ ions. While the color of the product formed by acid treatment with no Sn2+ ions present, H2W2O7, was yellow, a blue powder was obtained after the acid treatment in the presence of Sn2+ ions. No notable change in the morphology was observed after acid treatment. The X-ray diffraction pattern of the product acid-treated in the presence of Sn2+ ions was very similar to that of H2W2O7. Essentially all the Bi3+ ions were lost upon acid treatment, indicating the occurrence of selective leaching of bismuth oxide sheets in Bi2W2O9. A UV-visible absorption spectrum and XPS analysis demonstrated that the W6+ ions were partially reduced to W5+ ions, and the number of protons in the product was correspondingly 2.4 per [W2O7]. These results suggest the successful formation of a reduced layered tungstic acid, H2.4W2O7.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1 Cheng, K.H. and Whittingham, M. S., Solid State Ionics, 1, 151 (1980).Google Scholar
2 Glemser, O. and Sauer, F., Z. Anorg. Chem., 252, 160 (1943).Google Scholar
3 Dickens, P. G. and Hurditch, R. J., Nature., 215, 1266 (1967).Google Scholar
4 Straumanis, M. E., J. Am. Chem. Soc., 71, 679 (1949).Google Scholar
5 Brown, B. W. and Banks, E., J. Am. Chem. Soc., 76, 963 (1954).Google Scholar
6 Kudo, M., Ohkawa, H., Sugimoto, W., Kumada, N., Liu, Z., Terasaki, O. and Sugahara, Y., Inorg. Chem., 42, 4479 (2003).Google Scholar
7 Schaak, R. E. and Mallouk, T. E., Chem. Commun., 706 (2002).Google Scholar
8 Tahara, S. and Sugahara, Y., Recent Res. Devel. Inorg. Chem., 4, 13 (2004).Google Scholar
9 Sugimoto, W., Shirata, M., Sugahara, Y. and Kuroda, K., J. Am. Chem. Soc., 121, 11601 (1999).Google Scholar
10 Sugimoto, W., Shirata, M., Kuroda, K. and Sugahara, Y., Chem. Mater., 14, 2946 (2002).Google Scholar
11 Tsunoda, Y., Shirata, M., Sugimoto, W., Liu, Z., Terasaki, O., Kuroda, K. and Sugahara, Y., Inorg. Chem., 40, 5768 (2001).Google Scholar
12 Champarnaud-Mesjard, J.-C., Flit, B. and Watanabe, A., J. Mater. Chem., 9, 1319 (1999).Google Scholar
13 Hollinger, G., Duc, T. M. and Deneuville, A., Phys. Rev. Lett. 37, 1564 (1976).Google Scholar
14 Gerard, P., Deneuville, A. and Courths, R., Thin Solid Films, 71, 221 (1980).Google Scholar
15 Gutíerrez-Alejandre, A., Ramírez, J. and Busca, G., Catal. Lett., 56, 29 (1998).Google Scholar
16 Flisch, T. H. and Mains, G. M., J. Chem. Phys., 76, 780 (1982).Google Scholar
17 Wanlass, D. R. and Sienko, M. J., J. Solid State Chem., 12, 362 (1975).Google Scholar
18 Garif'yanov, N.N., Vavilova, E.L., Physica C, 383, 417 (2003).Google Scholar