Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-30T20:29:27.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and Properties of Infrared Transparent Condutive Thin Films

Published online by Cambridge University Press:  31 January 2011

Yiding Wang ,
Li Li ,
Junjing Chen ,
Zhenyu Song ,
Yupeng An  and
Yu Zhang
Yiding Wang
Affiliation:
[email protected], Jilin University, Changchun, China
Li Li
Affiliation:
[email protected], Jilin University, Changchun, China
Junjing Chen
Affiliation:
[email protected], Jilin University, Changchun, China
Zhenyu Song
Affiliation:
[email protected], Jilin University, Changchun, China
Yupeng An
Affiliation:
[email protected], Jilin University, Changchun, China
Yu Zhang
Affiliation:
[email protected], State key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun, JiLin, China
Get access

Abstract

This paper presents results for infrared transparent and conducting thin films based on In2O3. The films have been prepared by magnetrons sputtering equipment with different condition. Typical transmittance of 70%-80% with a film sheet resistance of 80-300Ω/□ in the 3.5-5.0μrn region has been achieved.

Optically transparent and electrically conductive semiconductor Oxide films have been extensively studied in recent years. Such films have been prepared by various methods. In general, these films have high visible transmittance, but are opaque in the IR wavelength range of 1-12μm IR transmission. The infrared transparent and electrically conductive thin films are useful in certain important applications. For example, these films can be use as antistatic coatings, and while permitting a reasonable transmission coefficient for IR. Another obvious application is to serve as the conducting electrode for various optical devices where good infrared transmission is important. So, it is important to research indium oxide base infrared (3-5 um) transparent conduction thin films.

It has been developed that preparation condition influence on properties of thin films. Such as the sputtering time, and pressure, and power, and the substrate temperature, had great influence on the crystal structure, optical and electrical properties of In2O3-based thin films.

The In2O3-based thin films obtained were characterized and analyzed by X-ray Diffractometer (XRD), Atomic Force Microscope (AFM), Vander Pauw Method and Fourier Transform Infrared Spectroscopy (FTIR).

Keywords

Alsputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1220: Symposium BB – Green Chemistry in Research and Development of Advanced Materials , 2009 , 1220-BB02-08
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 FP, Yan, Wang, L, Wei, H, YJ, Fu, Jian, W, Zheng, K, XQ, Mao, Li, J, LS, Lou, Peng, J, and SS, Jian. Acta Physica Sinica., 58, 1793–1797, (2009).Google Scholar
2 FP, Yan, Wei, Y, YJ, Fu, Wei, H, TR, Cong, Wang, L, YF, Li, Lu, P, Liu, Y, PL, Tao, MX, Qu, and SS., Jian Acta Physica Sinica., 58, 321–327, (2009).Google Scholar
3 FengPing, Yan, YiFan, Li, Lin, Wang, TaoRong, Gong, Peng, Liu, Yang, Liu, Pei-Ling, Tao, MeiXia, Qu, ShuiSheng, Jian. Acta Physica Sinica., 57, 5735–5741, (2008).Google Scholar
4 Badeker, K. Phys, 22, 749 (1907).Google Scholar
5 Lehmann, H.W. and Widmer, R. Thin Solid Films, 27, 9–368 (1975).Google Scholar
6 Kim, H. Gilmore, C.M. Horwitz, J.S. and Pique, A. Appl.Phys.Lett, 76, 259–261 (2000)Google Scholar
7 Shanthi, E. Duta, V. A. Banerjee and Chopra, K.L. J. Appl.Phys., 51, 6243–6251 (1980).Google Scholar
8 Shanthi, E. Duta, V. Banerjee, A. and Chopra, K.L. J. Appl.Phys., 53, 1615–1621 (1982).Google Scholar
9 Xiu, F.X. Yang, Z. Mandalapu, L.J. Zhao, D.T. and Liu, J.L.. Appl. Phys. Lett., 87, 152101 (2005)Google Scholar
10 Wickersham, C.E. Greene, J.. Phys.Status Solid A, 47, 329 (1978).Google Scholar
11 Vossen, J.L, RCAREV., 32, 269 (1971).Google Scholar
12 Avaritsotis, J.N. and Howson, R.P.. Thin Solid Films., 77, 351 (1981).Google Scholar
13 Golan, G. Axelevitch, A. and Rabinovitch, E.. J. Microelectronics., 29, 689 (1998).Google Scholar
14 Synowicki, R.A.. Thin Solid Films., 313-314, 394 (1998).Google Scholar