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Post Deposition Annealing Temperature Effect on White-light Emitting of Sputter Deposited Zr-doped HfO2 Thin Film

Published online by Cambridge University Press:  18 September 2014

Chi-Chou Lin  and
Yue Kuo
Chi-Chou Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A.
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Abstract

The warm white light emission from the MOS capacitor containing the Zr-doped HfO2 high-k thin film on a p-type Si wafer under various post deposition annealing temperatures has been investigated. The light intensity is affected by the annealing temperature and the magnitude of the stress voltage. The annealing temperature changes the defect density and the physical thickness of the high-k stack. The high stress voltage induces the strong light emission because of the passage of a large current through the conductive path. The broad band emission spectrum covers the visible and near IR wavelength range with a large color rendering index. This new light emission device has a very long lifetime of > 1,000 hours at the atmosphere without a protection layer. The device is made of the IC compatible material and fabrication process, which favors the application over a wide range of products.

Keywords

luminescencedielectric propertiesoptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1698: Symposium II/JJ/KK – Materials, Processes and Devices for Nanophotonics, Nonlinear Optics and Resonant Optics , 2014 , mrss14-1698-ii08-20
Copyright
Copyright © Materials Research Society 2014 

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References

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