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Porous Silicon Multilayer Mirrors and Microcavity Resonators for Optoelectronic Applications

Published online by Cambridge University Press:  09 August 2011

S. Chan ,
L. Tsybeskov  and
P.M. Fauchet
S. Chan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
P.M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
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Abstract

Porous silicon multilayer structures are easily manufactured using a periodic current density square pulse during the electrochemical dissolution process. The difference in porosity profile, corresponding to a variation in current density, is attributed to a difference in refractive index. Manipulating the difference in refractive index, high quality optical filters can be made with a maximum reflectivity peak ˜ 100%. The next logical step to further exploit these optical mirrors is to incorporate them into an LED device. The benefit of adding a multilayer mirror below a luminescent film of porous silicon is to significantly reduce the amount of light loss to the silicon substrate and increase the light output. However, oxidation is required to stabilize the as-anodized porous silicon film. This disrupts the overall index profile of the multilayer stack, causing the peak reflectance to blue shift. This phenomenon must be quantified and accounted before device implementation. We present a detailed study on the effects of oxidation temperature, gas environment, and annealing time of porous silicon multilayer structures in a device configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 117
Copyright
Copyright © Materials Research Society 1999

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