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Pore sealing of SiOCH ultra low-k dielectrics with polyimide Langmuir-Blodgett film

Published online by Cambridge University Press:  30 July 2012

S.I. Goloudina ,
A. S. Ivanov ,
M. B. Krishtab ,
V.V. Luchinin ,
V.M. Pasyuta ,
I. V. Gofman ,
V. P. Sklizkova ,
V. V. Kudryavtsev  and
M. R. Baklanov
S.I. Goloudina
Affiliation:
Saint Petersburg Electrotechnical University (ETU), 197376 St. Petersburg, Russia
A. S. Ivanov
Affiliation:
Saint Petersburg Electrotechnical University (ETU), 197376 St. Petersburg, Russia
M. B. Krishtab
Affiliation:
Saint Petersburg Electrotechnical University (ETU), 197376 St. Petersburg, Russia IMEC, Leuven, Belgium
V.V. Luchinin
Affiliation:
Saint Petersburg Electrotechnical University (ETU), 197376 St. Petersburg, Russia
V.M. Pasyuta
Affiliation:
Saint Petersburg Electrotechnical University (ETU), 197376 St. Petersburg, Russia
I. V. Gofman
Affiliation:
Institute of Macromolecular compounds RAS, 199004 Saint-Petersburg, Russia
V. P. Sklizkova
Affiliation:
Institute of Macromolecular compounds RAS, 199004 Saint-Petersburg, Russia
V. V. Kudryavtsev
Affiliation:
Institute of Macromolecular compounds RAS, 199004 Saint-Petersburg, Russia
M. R. Baklanov
Affiliation:
IMEC, Leuven, Belgium
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Abstract

Continuous decrease of the feature size of transistors in modern integrated circuits (ICs) constrains thickness of auxiliary dielectric layers in interconnects because of their relatively high dielectric constant, which reduces the efficiency of low-k material integration. Dielectric materials used today as barrier or etch-stop layers are usually SiN (k ∼ 7.0) and SiCN (k ∼ 4.8), which k-value significantly exceeds that of recent ultra low-k materials (k < 2.2). In our work we have investigated thin films of rigid-chain polyimide (PI) with a k-value of about 3.2-3.3. This film was deposited using a Langmuir-Blodgett (LB) technique and can be as thin as several monolayers. The intermolecular interaction of densely packed precursor macromolecules within a monolayer formed at the water-air interface makes it possible to avoid penetration of precursor material inside the pores. The latter peculiarity of the deposition process results in a pore sealing effect using a 4 nm PI film.

Keywords

dielectricporositypolymer
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1428: Symposium C – “Interconnect Challenges for CMOS Technology--Materials, Processes and Reliability for Downscaling, Packaging and 3D Stacking” , 2012 , mrss12-1428-c01-05
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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