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Polysilicon Nanowires for chemical sensing applications

Published online by Cambridge University Press:  11 July 2012

E. Jacques
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
L. Ni
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
A. C. Salaün
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
R. Rogel
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
L. Pichon
Affiliation:
Institut d’Electronique et de Télécommunications de Rennes, UMR 6074, Campus de Beaulieu, bâtiment 11 B, 263 avenue du Général Leclerc, 35042 Rennes cedex, France
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Abstract

Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location on the substrate. Grounded and suspended polycrystalline silicon nanowires with a curvature radius as low as 150nm are integrated into resistors and used as gas (ammonia) sensors. Results show potential use of these nanowires for charged chemical species detection with an increase of the sensitivity with the increase of SiNWs exchange surface with the environment.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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