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Polarity dependence of In-rich InGaN and InN/InGaN MQWs

Published online by Cambridge University Press:  01 February 2011

Songbek Che ,
Takuro Shinada ,
Tomoyasu Mizuno ,
Yoshihiro Ishitani  and
Akihiko Yoshikawa
Songbek Che
Affiliation:
[email protected], Chiba University, Electronic and Mechanical Engineering, 1-33 Yayoi-cho, Inage-ku, Chiba, Chiba, 263-8522, Japan, 81-43-290-3332, 81-43-290-3332
Takuro Shinada
Affiliation:
[email protected]
Tomoyasu Mizuno
Affiliation:
[email protected]
Yoshihiro Ishitani
Affiliation:
[email protected]
Akihiko Yoshikawa
Affiliation:
[email protected]
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Abstract

In-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500∼550°C. By using the In-polarity In0.7Ga0.3N as a barrier layer, the InN/InGaN multi-quantum wells were successfully fabricated on the III-element polarity GaN templates at 450°C. Fine periodic structures and strong photoluminescence emission around optical communication wavelength were obtained from the In-polarity MQWs. These results indicate that the In-polarity growth is preferred to obtain a high quality InGaN film and the InN/InGaN MQWs in spite of its lower growth temperature.

Keywords

nitridemolecular beam epitaxy (MBE)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF06-03
Copyright
Copyright © Materials Research Society 2006

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References

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