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Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon

Published online by Cambridge University Press:  15 February 2011

Ulrich Gösele  and
Werner Frank
Ulrich Gösele
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., USA
Werner Frank
Affiliation:
MPI fur Metallforschung, Institut für Physik, and Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Stuttgart, Fed. Rep. Germany
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Abstract

The paper introduces the basic point-defect models proposed for silicon, which involve either vacancies or self-interstitials only, or both types of point defects simultaneously under thermal-equilibrium conditions. The growth and shrinkage kinetics of oxidation-induced stacking faults as well as oxidation-enhanced or -retarded diffusion phenomena are discussed within the frame work of these models. Whereas no unambiguous conclusions on the dominant diffusion mechanism can be drawn from the available oxidation-related experiments, recent investigations on so-called anomalous diffusion phenomena (e.g., the ‘emitter-push effect’) and on the diffusion of gold in silicon demonstrate Si self-interstitials to be the point defects governing self- and impurity diffusion. The possibility of a coexistence of vacancies and self-interstitials in thermal equilibrium is discussed in this context. The paper concludes with speculations on how carbon in conjunction with self-interstitials may influence the nucleation process of oxygen precipitates in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 55
Copyright
Copyright © Materials Research Society 1981

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