Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T03:33:17.132Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma-Assisted MOCVD Growth of ZnO Thin Films

Published online by Cambridge University Press:  01 February 2011

Maria Losurdo ,
Maria Michela Giangregorio ,
Pio Capezzuto ,
Giovanni Bruno ,
Graziella Malandrino ,
Manuela Blandino  and
Ignazio Fragalà
Maria Losurdo
Affiliation:
[email protected], IMIP-CNR, PLASMACHEMISTRY, VIA ORABONA 4, BARI, BARI, 70125, Italy, +39.0805443562, +39.0805442024
Maria Michela Giangregorio
Affiliation:
[email protected]
Pio Capezzuto
Affiliation:
[email protected], IMIP-CNR, PLASMACHEMISTRY, Italy
Giovanni Bruno
Affiliation:
[email protected], IMIP-CNR, PLASMACHEMISTRY, Italy
Graziella Malandrino
Affiliation:
[email protected], Universita di Catania, Chemistry, Italy
Manuela Blandino
Affiliation:
[email protected], Universita di Catania, Chemistry, Italy
Ignazio Fragalà
Affiliation:
[email protected], Universita di Catania, Chemistry, Italy
Get access

Abstract

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

Keywords

plasma-enhanced CVD (PECVD) (deposition)II-VIoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF18-06-EE09-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., Steiner, T., Progress in Material Science, 50, 293 (2005) and reference therein.CrossRefGoogle Scholar
2. Robbins, J.J., Harvey, J., Leaf, J., Fry, C., Wolden, C.A., Thin Solid Films, 473, 35 (2005).CrossRefGoogle Scholar
3. CRC Handbook of Chemistry and Physics, 57th ed, CRC press, 1976–1977.Google Scholar
4. Malandrino, G., Blandino, M., Perdicaro, L. M. S., Fragalà, I. L., Rossi, P., Dapporto, P., Inorg. Chem., 44, xxx, (2005). DOI 10.1021/ic051175i.CrossRefGoogle Scholar
5. Bruggemann, D.A.G., Ann. Phys.(Leipzig) 24, 636 (1965).Google Scholar
6. Adachi, S. in “Optical Constants of Crystalline and Amorphous Semiconductors”, Kluwer Academic Publishers, Boston, p. 420–424 (1999).CrossRefGoogle Scholar
7. Matsuda, A., Thin Solid Films 337, 1 (1999).CrossRefGoogle Scholar