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Piezoelectric Photoacoustic Spectra In CuGaSe2 Thin Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Kenji Yoshino ,
Daisuke Maruoka ,
Masakazu Kawahara ,
Atsuhiko Fukuyama ,
Kouji Maeda ,
Paul J. Fons ,
Shigeru Niki ,
Akimasa Yamada  and
Tetsuo Ikari
Kenji Yoshino
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, [email protected]
Daisuke Maruoka
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, [email protected]
Atsuhiko Fukuyama
Affiliation:
Department of Materials Science, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan
Kouji Maeda
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, [email protected]
Paul J. Fons
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Shigeru Niki
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Akimasa Yamada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Tetsuo Ikari
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, [email protected]
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Abstract

The piezoelectric photoacoustic (PPA) spectra for Cu-rich CuGaSe2 (CGS)/GaAs epitaxial layers were successfully observed between liquid nitrogen and room temperatures for the first time. Bandgap energy of CGS (A band) is estimated to be 1.72 eV at liquid nitrogen temperature. The activation energies of three possible intrinsic defect levels are estimated to be about 80, 130 and 190 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 151
Copyright
Copyright © Materials Research Society 1998

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