Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T09:40:12.893Z Has data issue: false hasContentIssue false
  • English
  • Français

Physically Based Compact Model for Segmented a-Si:H n-i-p Photodiodes

Published online by Cambridge University Press:  01 February 2011

Jeff Hsin Chang ,
Timothy Tredwell ,
Gregory Heiler ,
Yuri Vygranenko ,
Denis Striakhilev ,
Kyung Ho Kim  and
Arokia Nathan
Jeff Hsin Chang
Affiliation:
[email protected], Carestream Health, Research and Innovation, 1049 Ridge Road West, Rochester, NY, 14615, United States, (585) 413-3684
Timothy Tredwell
Affiliation:
[email protected], Carestream Health Inc., 1049 Ridge Road West, Rochester, NY, 14615, United States
Gregory Heiler
Affiliation:
[email protected], Carestream Health Inc., 1049 Ridge Road West, Rochester, NY, 14615, United States
Yuri Vygranenko
Affiliation:
[email protected], University of Waterloo, 200 University Avenue West, Waterloo, M1S 3H3, Canada
Denis Striakhilev
Affiliation:
[email protected], University of Waterloo, 200 University Avenue West, Waterloo, M1S 3H3, Canada
Kyung Ho Kim
Affiliation:
[email protected], University of Waterloo, 200 University Avenue West, Waterloo, M1S 3H3, Canada
Arokia Nathan
Affiliation:
[email protected], London Centre for Nanotechnology, University College, London, WC1H OAH, United Kingdom
Get access

Abstract

Hydrogenated amorphous silicon (a–Si:H) n–i–p photodiodes are used as pixel sensor elements in large-area flat-panel detectors for medical imaging diagnostics. Accurate model of the sensor plays an imperative role in determining the performances of the detector systems as well as ascertaining design issues prior to production. This work presents the formulation of a compact model for segmented a–Si:H n–i–p photodiodes suitable for circuit-level simulation. The underlining equations of the model are based on device physics where the parameters are extracted from pertinent measurement results of previously fabricated a–Si:H n–i–p photodiodes. Furthermore, the implemented model allows photoresponse simulation with the addition of an external current source. Results of the simulation demonstrated excellent matching with measurement data for different photodiode sizes at various temperatures. The model is implemented in Verilog-A and simulated under Cadence Virtuoso design environment using device geometry and extracted parameters as inputs. The model formulation and parameter extraction process, as well as measurements and simulation results are presented.

Keywords

optoelectronicsensorthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A18-08
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Street, R. A. in Technology and Application of Amorphous Silicon, edited by Street, R. A., (Springer-Verlag, Heidelberg, 2000), p. 204.Google Scholar
2. Chen, I. and Lee, S. J. Appl. Phys. 53, 1045 (1982).Google Scholar
3. Swartz, G. A. J. Appl. Phys. 53, 712 (1982).Google Scholar
4. Hack, M. and Shur, M. J. Appl. Phys. 54, 5858 (1983).Google Scholar
5. Misiakos, K. and Lindholm, F. A. J. Appl. Phys. 64, 383 (1988).Google Scholar
6. Dhariwal, S. R. and Rajvanshi, S. Sol. Energy Mater. Sol. Cells 79, 199–233 (2003).Google Scholar
7. Vygranenko, Y. Chang, J. H. Nathan, A. Mater. Res. Soc. Symp. Proc. 862, A9.4 (2005).Google Scholar
8. Chang, J. H. Chuang, T. C. Vygranenko, Y. Kim, K. H. Striakhilev, D. Nathan, A. Heiler, G. and Tredwell, T. Mater. Res. Soc. Symp. Proc. 989, A19.4 (2007).Google Scholar
9. Street, R. A. Appl. Phys. Lett. 57, 1334 (1990)Google Scholar