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Physical and Chemical Effects of Focused Ga-Ion Beam on GaAs (100)

Published online by Cambridge University Press:  25 February 2011

Wei Chen ,
P. Chen ,
R. Viswanathan ,
A. Madhukar ,
Jun Chen ,
Kian Kaviani ,
Q. Xie  and
Kezhong Hu
Wei Chen
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
P. Chen
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
R. Viswanathan
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
A. Madhukar
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
Jun Chen
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
Kian Kaviani
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
Q. Xie
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
Kezhong Hu
Affiliation:
PHOTONIC MATERIALS AND DEVICES LABORATORY, UNIVERSITY OF SOUTHERN CALIFORNIA, LOS ANGELES, CA 90089-0241
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Abstract

Ga droplet formation on GaAs(100) substrates milled by focused Ga ion beam is studied using scanning electron microscopy and scanning Auger microscopy. It is found that Ga droplet formation requires a threshold Ga+ dose of ∽ 1016/cm 2 and is closely correlated to the formation of Ga overlayer at the milled surface and the increase in Ga concentration by ∽ 32% in the subsurface region. The Ga droplet evolution appears to be driven by the instantaneous energy deposited continuously by the ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 301
Copyright
Copyright © Materials Research Society 1992

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References

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