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Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

Published online by Cambridge University Press:  26 February 2011

C. Wetzel ,
W. Walukiewicz ,
E. E. Haller ,
H. Amano  and
I. Akasaki
C. Wetzel
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA
W. Walukiewicz
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA
E. E. Haller
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA
H. Amano
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
I. Akasaki
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
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Abstract

Wide bandgap GaN very often shows a high electron concentration. Although several impurities such as O and Si have been identified, the concentration is not high enough to account for the number of free carriers. As a consequence native defects namely the nitrogen vacancies are widely considered to be present at high densities. Several calculations predict different energy levels of this strongly localized defect. We present photoluminescence experiments of wurtzite GaN and AlGaN layers under large hydrostatic pressure to search for localized defects within the questionable energy range of 3 .0 to 3 .8 eV above the valence band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 509
Copyright
Copyright © Materials Research Society 1995

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