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Photoluminescence of Different Phase Si Nanoclusters in Amorphous Hydrogenated Silicon

Published online by Cambridge University Press:  01 February 2011

Tetyana V. Torchynska
Tetyana V. Torchynska*
Affiliation:
[email protected], National Polytechnic Institute, Material Science, av. IPN, U.P.A.L.M., Ed.9,, Mexico D.F., 07738, Mexico, 5255'57296000ext55031, 525557296000ext55003
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Abstract

This paper presents the results of XRD and PL spectrum studies for Si nano-clusters embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1735-1885°C. It was shown that variation of filament temperatures allows producing the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between the intensity of some photoluminescence bands and the concentrations of Si nanocrystallites and amorphous Si nanoclusters has been shown. The nature of light emission is discussed.

Keywords

amorphousnanostructureluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A06-05
Copyright
Copyright © Materials Research Society 2008

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References

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