Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T02:24:59.898Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence investigations on a native donor in ZnO

Published online by Cambridge University Press:  01 February 2011

Bruno K. Meyer ,
S. Lautenschläger ,
S. Graubner ,
C. Neumann  and
J. Sann
Bruno K. Meyer
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut, Heinrich Buff Ring 16, Giessen, N/A, 35392, Germany
S. Lautenschläger
Affiliation:
stefan.lautenschlä[email protected], Justus Liebig Universität, 1. Physikalisches Institut
S. Graubner
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
C. Neumann
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
J. Sann
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
Get access

Abstract

The shallow donor impurities in ZnO with binding energies between 46 and 56 meV have been studied in great detail in the recent years. They give rise to neutral donor bound exciton recombinations with the A- and B-valence bands, show rotator states and two-electron-satellite transitions. These properties allowed to establish the excited state splittings of the donors as well as confirming Hayne's rule in ZnO. So far they all seem to be of extrinsic origin, hydrogen, aluminum, gallium and indium in order of increasing binding energy. For many years it was common sense that intrinsic defects would dominate the n-type conductivity of ZnO. Interstitial zinc as well as oxygen vacancies should be double donors, and in order to contribute to the n-type-conduction they should have shallow levels, and low formation energies to be abundant. In PL-measurements at T∼100 K on various ZnO samples, single crystals as well as thin films, a luminescence around 3.31 eV was detected. Due to its line shape and temperature behaviour it is identified as bound-to-free recombination. If we assume that the 3.31 eV band with its level at EC ∼ 130 meV is the ++/+ level of the zinc interstitial we calculate for the binding energy of the +/0 level ∼ 130 meV, i.e. around 33 meV. Undoped Zn-rich epitaxial films grown by CVD show a dominant I3 recombination at 3.367 eV which according to Haynes rule is consistent with a shallow donor level at 33 meV. Moreover, they have free n-type carrier densities of 2×1019 cm−3 and as revealed by SIMS the common donor impurities (Al, Ga, In) cannot account for the high carrier densities.

Keywords

Znoxideepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE08-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Reynolds, D.C., Litton, C.W., and Collins, T.C., Phys. Rev. 140, A1726 (1965)Google Scholar
[2] Meyer, B.K., Alves, H., Hofmann, D.M., Kriegseis, W., Forster, D., Bertram, F., Christen, J., Hoffmann, A., Straβburg, M.,, Dworzak, M., Haboeck, U. and Rodina, A.V., phys. stat. sol (b) 241, 2, 231–260 (2004)Google Scholar
[3] Thomas, D.G., J. Phys. Chem. Sol. 3, 229 (1957)Google Scholar
[4] Hagemark, K.I., J. Sol. State Chem. 16, 293 (1976)Google Scholar
[5] Kohan, A.F., Ceder, G., Morgan, D., and Van de Walle, C.G., Phys. Rev. B 61, 15019 (2000)Google Scholar
[6] Oh, D.C., Suzuki, T., Kim, J.J., Makino, H., Hanada, T., Cho, M.W., and Yao, T., Applied Physics Letters 86, 032909 (2005)Google Scholar
[7] Shohata, N., Matsumura, T., and Ohno, T., Jpn. J. Appl. Phys. 19, 1793 (1980)Google Scholar
[8] Rohatgi, A., Pang, S.K., Gupta, T.K., and Straub, W.D., J. Appl. Phys. 63, 5375 (1988)Google Scholar
[9] Lee, W.I., Young, R.L., and Chen, W.K., J. Appl. Phys., Part 2 35, L1158 (1996)Google Scholar
[10] Ohashi, N., Tanaka, J., Ohgaki, T., Haneda, H., Ozawa, N., and Tsurumi, T., J. Mater Res. 17, 1529 (2002)Google Scholar
[11] Auret, F.D., Goodman, S.A., Legodi, M., Meyer, W.E., and Look, D.C., Appl. Phys. Lett. 80, 1340 (2002)Google Scholar
[12] Look, D.C., Hemsky, J. W., and Sizelove, J. R., Phys. Rev. Lett. 82, 2552 (1999)Google Scholar
[13] Ko, Hang-Ju and Yao, Takafumi, Chen, Yefan, and Hong, Soon-Ku J. Appl. Phys. 92, 8 (2002)Google Scholar
[14] Makino, T. and Segawa, Y., Tsukazaki, A., Ohtomo, A., and Kawasaki, M., Appl. Phys. Lett. 87, 022101 (2005)Google Scholar
[15] Haynes, J. R., Phys. Rev. Lett. 4, 361 (1960)Google Scholar
[16] Roth, A.P. and Williams, D.F., J. Appl. Phys. 52, 6685 (1982)Google Scholar
[17] Ziegler, E., Heinrich, A., Oppermann, H., and Stoever, G., phys. status solidi A 66, 635 (1981)Google Scholar
[18] Natsume, Y., Sakata, H., and Hirayama, T., phys. status solidi A 148, 484 (1995)Google Scholar
[19] Natsume, Y., Sakata, H., Hirayama, T., and Yanagida, H., J. Appl. Phys. 72, 4203 (1992)Google Scholar
[20] Hagemark, K.I. and Chacka, L.C., Solid, J. State Chem. 15, 261 (1975)Google Scholar