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Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

L. Tsybeskov ,
S. P. Duttagupta  and
P. M. Fauchet
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
S. P. Duttagupta
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
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Abstract

The results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 683
Copyright
Copyright © Materials Research Society 1995

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References

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