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Photoinduced Amorphous ↔ Crystalline Transitions In Sbx Sc1−x Films

Published online by Cambridge University Press:  15 February 2011

Paul Stradins ,
Ojars Balors  and
Vyatcheslav Gerbreder
Paul Stradins
Affiliation:
Physics Institute, Salaspils, Latvia
Ojars Balors
Affiliation:
Department of Physics, Daugavpils Pedagogical Institute, Daugavpils, Latvia
Vyatcheslav Gerbreder
Affiliation:
Department of Physics, Daugavpils Pedagogical Institute, Daugavpils, Latvia
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Abstract

We present a study of laser pulse induced crystallization and amorphizationin SbxSc1−x films. The time required to reach stableamorphous state after the pulse increases with exciting pulse length andbecomes constant when stationary temperature field is approached by the endof the pulse. The time dependence of the excited spot's local temperature isdeduced directly from amorphization threshold intensity dependence on thepulse length and is used to calculate the cooling times after theamorphizing pulse. Two photocrystallization regimes are distinguisheddepending on whether the melting starts before or after the end ofcrystallization, the condition depending on crystallization tendency forgiven composition x. The occurrence of melting limits the maximum opticalcontrast during photocrystallization. The results show that thecrystallization tendency of SbxSei-x rises with x and has a local maximumbetween x = 0.5 and x = 0.7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 429
Copyright
Copyright © Materials Research Society 1994

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References

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