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Photoelectrochemical Study of State of Art Copper Indium Gallium Diselenide Thin Films

Published online by Cambridge University Press:  21 March 2011

E. Clolus ,
A. Galtayries ,
B. Canava ,
J. F. Guillemoles  and
D. Lincot
E. Clolus
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (UMR 7575 CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231 Paris cedex 05, France
A. Galtayries
Affiliation:
Laboratoire de Physico-Chimie des Surfaces, Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231 Paris cedex 05, France
B. Canava
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS), Université de Versailles-Saint Quentin, 45 Av. des Etats Unis 78035 Versailles cedex, France
J. F. Guillemoles
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (UMR 7575 CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231 Paris cedex 05, France
D. Lincot
Affiliation:
Laboratoire de Physico-Chimie des Surfaces, Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231 Paris cedex 05, France
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Abstract

State of the art CIGS thin films have been studied by means of the semiconductorelectrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a short treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H9.7
Copyright
Copyright © Materials Research Society 2001

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References

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